SI4965DY-T1-E3 Allicdata Electronics
Allicdata Part #:

SI4965DY-T1-E3-ND

Manufacturer Part#:

SI4965DY-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2P-CH 8V 8SOIC
More Detail: Mosfet Array 2 P-Channel (Dual) 8V 2W Surface Mou...
DataSheet: SI4965DY-T1-E3 datasheetSI4965DY-T1-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: --
Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: --
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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The SI4965DY-T1-E3 is a Power MOSFET array produced by Vishay Siliconix. It is part of the SiPlus range of advanced DMOS products, providing high performance and power switching capability in a very small package. It is an ideal solution for high current applications such as motor drivers, battery protection, and appliance control. Its main advantages are its low on-resistance, low threshold voltage, and high current handling.

The device is composed of two independent Power MOSFETs, operating in the enhancement-mode. It has an integrated charge pump, allowing it to be driven by a logic-level control input. The logic level inputs, plus their voltage range and current capability are tailored specifically for automotive application. These features make the device a great choice for automotive applications, such as ECUs and alternator control.

The SI4965DY-T1-E3 combines the benefits of a standard MOSFET with the added protection and features of an integrated charge pump. The charge pump helps protect against transients, such as ESD and load dump, by providing a regulated voltage rail to the gate of the MOSFET. The charge pump also allows the MOSFET to have a lower threshold voltage, resulting in faster switching and better efficiency. The device is rated for 25A continuous current, with an input voltage limit of 14V and an operating temperature range of -40°C to 125°C.

The device has a wide range of applications, most notably in automotive applications such as ECUs and alternator control. It has also been used for motor control and power switching in appliances, as well as industrial applications. The device supports a wide range of logic levels, making it suitable for use in wide range of microcontroller-based applications. It is also well suited to battery protection applications, ensuring smooth and reliable operation while providing high level of protection.

In conclusion, the SI4965DY-T1-E3 is a powerful, versatile and efficient device well suited to a wide range of applications. It integrates a charge pump and logic level inputs to provide protection and faster switching times, making it ideal for automotive, industrial and appliance applications. With its low on-resistance, low threshold voltage and high current handling, it is an outstanding device for applications requiring large amounts of power.

The specific data is subject to PDF, and the above content is for reference

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