SI4936BDY-T1-GE3

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The SI4936BDY-T1-GE3 is a FET array device which consists of 12 N-channel Lateral Double Diffused Metal-Oxide-Semiconductor (LDMOS) transistors in one dual in-line package. Built on a 0.5-micron process, this device offers high gain, low threshold voltage and excellent thermal stability. It has a drain to source breakdown voltage of 100V and can operate over a temperature range of -55oC to +125oC. Each transistor includes an integrated low charge gate structure to ensure that the device operates accurately and reliably over a wide range of temperatures. In addition, the SI4936BDY-T1-GE3 has a maximum thermal resistance of about 5.4°C/W, a maximum output power of up to 800 W, and a maximum drain current of 5A.The SI4936BDY-T1-GE3 is mainly used in power amplifier applications, including RF radios, amplifiers and cellular transceivers. It is designed for high frequency operation and can be used in power amplifier designs up to 2GHz. The device offers a low distortion figure and a wide dynamic range, making it an ideal choice for linear amplifiers. It also provides excellent EMI/RFI filtering capabilities, making it suitable for use in medical and consumer electronics applications.The working principle behind this device is based on the physics of a FET. A FET is a three terminal device which consists of a source, gate and drain. The source-gate junction is reverse biased, allowing the gate-drain junction to control the current flow from the source to the drain. The voltage applied to the gate will affect the current flow, with the voltage being proportional to the gate-to-source voltage. This allows for precise control of the current through the device. When the gate voltage is increased, more current is allowed to flow through the device and when the gate voltage is decreased, less current is allowed to flow through it. In this way, the amount of current flowing through a FET can be controlled and this is how the SI4936BDY-T1-GE3 is used in power amplifiers.The SI4936BDY-T1-GE3 has many advantages that make it suitable for use in a wide range of amplification and filtering applications. It is robust and reliable, offering excellent thermal and shock stability. It also offers a wide frequency range, high input power capability and low power consumption. Its integrated low charge gate structure ensures that the device operates accurately and reliably in a range of temperatures. Additionally, its integrated EMI/RFI filtering capabilities enable it to be used in a wide range of applications.The SI4936BDY-T1-GE3 is a FET array device which provides excellent control of current flow and is suitable for use in a wide range of power amplification and filtering applications. Its robustness, reliability and low power consumption make it an ideal choice for a range of high-frequency amplifiers, radios, transceivers and medical electronics. Moreover, its integrated EMI/RFI filtering capabilities make it suitable for use in consumer electronics applications.

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