SIA413DJ-T1-GE3

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The SIA413DJ-T1-GE3 is a surface mount transistor. It is a single FET (Field Effect Transistor) MOSFET (Metal Oxide Semiconductor Field Effect Transistor), and is a member of the 413 family from SIA.FETs, or Field Effect Transistors, are active electronic devices that use a weak electric current to control, or gate, a much larger current of both types of polarity (positive and negative). FETs are voltage operated devices that require very little current to operate. This makes them extremely efficient and ideal for applications with low power consumptions.MOSFETs, or Metal Oxide Semiconductor Field Effect Transistors, are one type of Field Effect Transistors. MOSFETs are further divided into two categories; depletion type and enhancement type. The SIA413DJ-T1-GE3 is an enhancement type.The SIA413DJ-T1-GE3 is a very small and highly efficient single FET MOSFET. It is packaged in a very small surface mount package, making it ideal for applications where space is limited. Its size also makes it easier to accommodate on a board.The SIA413DJ-T1-GE3 has a maximum drain-source voltage of 30V and a drain-source current of 0.1A. It has a total power dissipation of 0.63W and an On-Resistance of 15Ohm. The operating temperature range is -55°C to 125°C.The SIA413DJ-T1-GE3 is a P-channel MOSFET, meaning that the current flows from the drain to the source when the Gate pin is at a negative potential relative to the source. When the Gate pin is at a positive potential relative to the source, the current flow is blocked.The working principle of a P-channel MOSFET is that current can flow if a small potential difference is applied between Gate and Source. This potential difference is known as the G-S voltage. If the G-S voltage is greater than the \'threshold voltage\' of the device, then the drain-source conductivity increases, allowing current to flow from drain to source.The SIA413DJ-T1-GE3 is designed for use in applications that require high efficiency and low power dissipation, such as portable electronics, automotive, power supplies, lighting, etc. It has a wide variety of applications including level shifters, current regulators, motor controllers, power amplifiers, etc.In summary, the SIA413DJ-T1-GE3 is a surface mount single FET MOSFET designed for applications where high efficiency and low power consumption are important. It is designed for use in a wide range of application fields such as portable electronics, automotive, power supplies, lighting, current regulators, motor controllers and power amplifiers. This device works by allowing current to flow from the drain to the source when the gate pin is at a negative potential relative to the source.

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