| Allicdata Part #: | SIA437DJ-T1-GE3TR-ND |
| Manufacturer Part#: |
SIA437DJ-T1-GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET P-CH 20V 29.7A SC70-6 |
| More Detail: | P-Channel 20V 29.7A (Tc) 3.5W (Ta), 19W (Tc) Surfa... |
| DataSheet: |  SIA437DJ-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 900mV @ 250µA |
| Package / Case: | PowerPAK® SC-70-6 |
| Supplier Device Package: | PowerPAK® SC-70-6 Single |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -50°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.5W (Ta), 19W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2340pF @ 10V |
| Vgs (Max): | ±8V |
| Gate Charge (Qg) (Max) @ Vgs: | 90nC @ 8V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 14.5 mOhm @ 8A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 29.7A (Tc) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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Introduction
The SIA437DJ-T1-GE3 is an advanced field effect transistor (FET) designed for use in a variety of applications. It is a single MOSFET, which is a type of transistor that is used in power circuits and integrated circuits, and is capable of handling high currents. This makes the SIA437DJ-T1-GE3 ideal for power conversion applications, power amplifiers and switching applications. The device is also designed to operate at low voltages, which makes it suitable for use with small mobile devices and battery operated applications.
Structure and Operation
The SIA437DJ-T1-GE3 is typically packaged as a small surface-mount technology (SMT) device, making it ideal for high-density boards where space is a premium. It is composed of two terminals - the source and drain - as well as a substrate, typically composed of silicon. The drain and source form a portion of a transistor that is connected to two solid isolation layers that form the core of the device. The substrate is typically composed of gallium arsenide.
The SIA437DJ-T1-GE3 is designed to operate in a depletion mode, where the transistor is kept off at all times until a gate voltage is applied. When a gate voltage is applied, it causes electrons to be attracted down to the substrate, creating a conductive channel between the source and drain. This current forms the basis for the operation of the SIA437DJ-T1-GE3.
Applications
The SIA437DJ-T1-GE3 is ideal for applications requiring high-power handling capabilities in a small form factor. It is particularly well suited for use in power and signal conversion applications, such as DC-DC converters and switching amplifiers. The device is capable of operating at frequencies as high as 1 MHz, making it well suited for high-speed switching applications in motor controllers and power electronics. The device is also well suited for use in small form factor mobile devices, due to its low voltage operation and small physical size.
Additionally, the device can be used in a variety of high-current analog and digital applications. It can be used as an amplifier, as a switch in a remote control, as a variac in a motor control, or as a voltage regulator. Its low voltage operation makes it well suited for use in battery-operated devices.
Conclusion
The SIA437DJ-T1-GE3 is an advanced single MOSFET designed for high power and high frequency operations. It is well suited for use in a variety of applications, such as power and signal conversion, analog and digital operations, and small form factor mobile devices. Its low voltage operation and small form factor makes it an ideal choice for applications requiring high power capabilities in a small form factor.
The SIA437DJ-T1-GE3 is an advanced field effect transistor (FET) designed for use in a variety of applications. It is a single MOSFET, which is a type of transistor that is used in power circuits and integrated circuits, and is capable of handling high currents. This makes the SIA437DJ-T1-GE3 ideal for power conversion applications, power amplifiers and switching applications. The device is also designed to operate at low voltages, which makes it suitable for use with small mobile devices and battery operated applications.
Structure and Operation
The SIA437DJ-T1-GE3 is typically packaged as a small surface-mount technology (SMT) device, making it ideal for high-density boards where space is a premium. It is composed of two terminals - the source and drain - as well as a substrate, typically composed of silicon. The drain and source form a portion of a transistor that is connected to two solid isolation layers that form the core of the device. The substrate is typically composed of gallium arsenide.
The SIA437DJ-T1-GE3 is designed to operate in a depletion mode, where the transistor is kept off at all times until a gate voltage is applied. When a gate voltage is applied, it causes electrons to be attracted down to the substrate, creating a conductive channel between the source and drain. This current forms the basis for the operation of the SIA437DJ-T1-GE3.
Applications
The SIA437DJ-T1-GE3 is ideal for applications requiring high-power handling capabilities in a small form factor. It is particularly well suited for use in power and signal conversion applications, such as DC-DC converters and switching amplifiers. The device is capable of operating at frequencies as high as 1 MHz, making it well suited for high-speed switching applications in motor controllers and power electronics. The device is also well suited for use in small form factor mobile devices, due to its low voltage operation and small physical size.
Additionally, the device can be used in a variety of high-current analog and digital applications. It can be used as an amplifier, as a switch in a remote control, as a variac in a motor control, or as a voltage regulator. Its low voltage operation makes it well suited for use in battery-operated devices.
Conclusion
The SIA437DJ-T1-GE3 is an advanced single MOSFET designed for high power and high frequency operations. It is well suited for use in a variety of applications, such as power and signal conversion, analog and digital operations, and small form factor mobile devices. Its low voltage operation and small form factor makes it an ideal choice for applications requiring high power capabilities in a small form factor.
The specific data is subject to PDF, and the above content is for reference
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