SIA445EDJT-T1-GE3

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SIA445EDJT-T1-GE3 is a n-channel enhancement mode field-effect transistor (FET). It is part of the SIA445EDJT-T1 series of n-channel FETs from Vishay. These transistors have an optimized parallel gate-source structure, integrated ceramic ESD protection, and a low on-resistance per unit area.

The device has an RDS(on) of 5 mΩ typical, at VGS = 10 V, and a maximum of 9.3 mΩ at VGS = 10 V. Its continuous drain-current rating is rated at 20 A, with a pulse rating of 70 A at 25 °C. Its maximum junction-temperature rating is rated at 175 °C. The SIA445EDJT-T1-GE3 is ideal for high-speed switching and is used in automotive, LED lighting, and industrial applications.

The SIA445EDJT-T1-GE3, like other FETs, is created by the application of a voltage between the gate and the source. When the voltage applied to the gate exceeds the threshold voltage, electrons are attracted from the source into the channel. This creates an enhanced field, which, in turn, modulates the resistance between the source and the drain. This allows for current to flow from the drain to the source.

FETs can operate in three different modes. Depletion mode FETs are created when the channel between the drain and the source is positively charged. When operating in this mode, the application of a gate voltage will act to reduce the current between the two terminals. Enhancement mode FETs are created when the opposite is true, and the gate voltage will act to enhance the current flow between the source and the drain. The SIA445EDJT-T1-GE3 is an enhancement mode device.

The SIA445EDJT-T1-GE3 is normally used in circuit designs that require high-speed switching, such as in automotive, LED lighting, and industrial applications. The device has a low on-resistance per unit area and an RDS(on) that is rated at 5 mΩ typical, at 10 V. Its continuous drain-current rating is rated at 20 A, and its pulse rating is 70 A. Its maximum junction temperature rating is 175°C.

The SIA445EDJT-T1-GE3 is also suitable for use in other applications, such as power management and motor control. The device helps to cut down on EMI interference, reduce component count, and improve system power efficiency. It is also relatively easy to use and maintain, making it an ideal choice for applications requiring speed and power.

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