SIA465EDJ-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SIA465EDJ-T1-GE3 is a low power, high-density MOSFET (metal oxide semiconductor field effect transistor) device used for controlling and switch signals with a high degree of accuracy and speed. It is one of the most popular components for use in low-voltage and high-frequency applications.The SIA465EDJ-T1-GE3 is a single, surface-mountable MOSFET that is designed for high-frequency operation and applications.The MOSFETs have low on-resistance and good thermal resistance, which enable them to switch rapidly with minimal power loss. Furthermore, they are available with built-in thermal protection and ESD protection. The SIA465EDJ-T1-GE3 is a N-channel enhancement mode MOSFET with a channel length of 1.8nm and a drain to source voltage of 45V.

The SIA465EDJ-T1-GE3 has many applications in the automotive, medical, communication, and other industries. It is used as a switching device in electronic circuits and is used in high-speed signal processing.It is also used in high-performance switching applications such as high-frequency radio frequency switch and radar systems. In addition, it is used for single-pole, dual-pole AC switching applications and for DC switching applications, such as electroplating and drive circuits.

The working principle of the SIA465EDJ-T1-GE3 is based on Field Effect Transistor (FET) technology. It is a three-terminal device with a gate, drain, and source, which controlls a current flow between the source and drain when the control voltage is applied to the gate. A MOSFET is basically a voltage-controlled FET, in which the current is controlled by the voltage applied to the gate. The SIA465EDJ-T1-GE3, due to its extremely low on-state resistance and very high ESD protection, is ideal for high-speed switching applications. It can also be used in power circuits and communication circuits, such as cable drivers and transceivers.

The SIA465EDJ-T1-GE3 is an ideal choice for applications that require low power consumption, high efficiency, and high signal speed. It has built-in thermal protection, which makes it suitable for use in high-temperature environments. Its high-frequency characteristics also make it an ideal component for signal processing and other high-speed applications. The SIA465EDJ-T1-GE3 is an excellent choice for many applications, due to its low power consumption, high efficiency, and high-speed signal processing.

The SIA465EDJ-T1-GE3 is a high quality, reliable, and low cost MOSFET component, which is suitable for a wide variety of applications. It is widely used for switching signals in high-speed applications and for controlling and switching current in power applications. Its low on-resistance, combined with its good thermal resistance and ESD protection, makes it an ideal choice for high-speed signal processing, continuous current-switching, and power conversion applications. The SIA465EDJ-T1-GE3 is an excellent choice for use in low-voltage and high-frequency applications, as well as for use in high-temperature environments where thermal protection and ESD protection is required.

The specific data is subject to PDF, and the above content is for reference