Allicdata Part #: | SIA406DJ-T1-GE3TR-ND |
Manufacturer Part#: |
SIA406DJ-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 12V 4.5A SC-70-6 |
More Detail: | N-Channel 12V 4.5A (Tc) 3.5W (Ta), 19W (Tc) Surfac... |
DataSheet: | SIA406DJ-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | PowerPAK® SC-70-6 |
Supplier Device Package: | PowerPAK® SC-70-6 Single |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.5W (Ta), 19W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1380pF @ 6V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 19.8 mOhm @ 10.8A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SIA406DJ-T1-GE3 is a high-speed, low-power P-Channel Enhancement Mode Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). It has an exceptional ability to switch extremely low voltage signals without deteriorating their performance. Additionally, the SIA406DJ-T1-GE3 has an extremely low on-resistance and excellent gate charge performance. SIA406DJ-T1-GE3 is available in an SOT-23 package.
The SIA406DJ-T1-GE3 is a very versatile device that can be used in a variety of applications. It can be used in audio amplifiers, high-frequency switching circuits, motor control, battery management, and many more. Additionally, it has a wide range of operating temperatures, making it suitable for a variety of applications.
The working principle of the SIA406DJ-T1-GE3 is based on the principle of metal-oxide-semiconductor structure. The device consists of a layer of metal oxide that acts as a gate dielectric between the body and the source, drain and gate electrodes. When a positive voltage is applied to the gate, it causes an accumulation of electrons in the channel region and attracts electrons to the source and drain electrodes. This creates an increase in the current flow between the source and the drain, and the transistor is considered to be “ON”. When the applied voltage is removed or reversed, the flow of electrons is blocked and the transistor is considered to be “OFF”.
The SIA406DJ-T1-GE3 is designed for low-voltage applications, with a breakdown voltage rating of 5V and a maximum gate-to-source and gate-to-drain voltage rating of -2V and 5V, respectively. Since the device works on extremely low voltages, it is considered to be an excellent choice for low voltage and low power applications. The device also has a very low on-resistance, making it suitable for high frequency switching systems.
The SIA406DJ-T1-GE3 is also known for its excellent gate-charge performance. The device has a low gate charge which allows it to be switched at frequencies up to 100kHz and higher. Additionally, since it has a low capacitance, it can be used in a wide range of applications, ranging from audio amplifiers to motor control.
The SIA406DJ-T1-GE3 is an excellent choice for a variety of applications, due to its low-voltage operation, low on-resistance, and excellent gate charge performance. The device is available in an SOT-23 package, and can be used in audio amplifiers, high-frequency switching circuits, motor control, battery management, and many more.
The specific data is subject to PDF, and the above content is for reference
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