SIA449DJ-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SIA449DJ-T1-GE3, also known as a Dual DMOS High Speed Switch, is a field-effect transistor (FET) designed for low voltage applications as well as high speed switching. Its drain-source breakdown voltage (VDS) of 50 V and maximum drain current of 15 A make it suitable for numerous applications such as in motor control, DC-DC conversion, and automotive motor control.

A field-effect transistor is a type of transistor that utilizes an electric field to modify the conductivity of the channel between source and drain electrodes. The source, gate and drain pins are represented on a circuit diagram as FETs are versatile components that can be used for a variety of applications. The SIA449DJ-T1-GE3 has an internal low on-resistance structure, enabling it to operate similar to a low on-resistance MOSFET (metal-oxide-semiconductor field-effect transistor).

The gate and source of the SIA449DJ-T1-GE3 are connected internally, allowing the device to be driven by low voltage pulse signals. Its gate-to-source voltage (VGS) range of -4~-20V permits it to operate with a wide range of logic thresholds, while its gate-charge (QG) of 17.6 nC and rise time of 14.3 ns ensure a high switching speed of up to 15 A.

In terms of applications, the SIA449DJ-T1-GE3 has a wide range of uses. It\'s ideal for DC-DC conversion due to its high current capacity and short switching times, making it suitable for performing inductive or capacitive switching tasks. It\'s also suitable for motor control applications, due to its high-speed transistor switch and low on-resistance characteristics.

As far as the working principle is concerned, the SIA449DJ-T1-GE3 is based on a single-gate structure. When a positive voltage is applied to the gate, it creates an electric field in the source-drain channel. This electric field attracts and releases electrons from the channel, thus controlling the flow of current. When the voltage is removed, electrons which have been attracted back to the channel limit the current flow again.

The gate voltage of the SIA449DJ-T1-GE3 is controlled by a logic signal, enabling it to be used as a switch. When the logic signal is low, the gate voltage of the device is at its lowest, hence the device is turned off and no current is able to pass through it. Conversely, when the logic signal is high, the gate voltage rises and allows current to pass through it. Due to its low on-resistance, the SIA449DJ-T1-GE3 is well suited for high speed switching applications.

Overall, the SIA449DJ-T1-GE3 is a versatile and powerful FET suitable for a wide range of applications. Its low on-resistance and high current capacity makes it well suited for DC-DC conversion and motor control tasks, while its ability to be driven by a low voltage pulse signal enables it to be used in high-speed switching applications. The single-gate structure is simple to understand, as it allows current to flow only when a high logic signal is applied to the gate.

The specific data is subject to PDF, and the above content is for reference