SIA466EDJ-T1-GE3 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

SIA466EDJ-T1-GE3 is a single junction MOSFET (Metal Oxide Semiconductor Field Effect Transistor), and is typically used in applications involving low power and high speed switching. It is an artificially produced semiconductor component, composed of two or more layers of material, and its electrical characteristics are determined by the chemical composition of the layers. The SIA466EDJ-T1-GE3 is constructed with a single body layer and is ideal for applications where compact size is important, such as in digital circuits.

The operating principle of the SIA466EDJ-T1-GE3 is best explained through its structure. It is composed of a body and two gates. These gates are used to control the flow of current through the device by applying a voltage. The voltage is used to change the electrical field within the device which in turn manipulates the resistance of the body and enables current to flow through the device.

The SIA466EDJ-T1-GE3 is ideal for low-power switching applications due to its high switching speed. The threshold voltage for this device is 3.2V and the driving current for this device is 5mA which makes it perfect for low-power circuits. High speed switching is another great feature of this device. The SIA466EDJ-T1-GE3 has a switching time of 5ns which is faster than most other single transistors.

The SIA466EDJ-T1-GE3 is also well-suited for applications that require noise resistance because it has low Miller capacitance which helps reduce the amount of noise present in a circuit. Additionally, this device has a low on-state resistance of 8R which ensures low power consumption even under high currents. Finally, the SIA466EDJ-T1-GE3 has a high breakdown voltage of 30V which makes it suitable for high-voltage applications.

The SIA466EDJ-T1-GE3 is most commonly used in current sensing circuits, switchmode power supplies, DC-DC converters, switching regulators, pulse width modulators, logic circuits and communication circuits. This device\'s excellent speed and noise immunity make it a great choice for applications that require high speed switching and noise rejection.

In summary, the SIA466EDJ-T1-GE3 is an ideal choice for low power switching applications because its high switching speed, low on-state resistance, low Miller capacitance and high breakdown voltage make it perfect for applications that require noise immunity and high speed switching. Its compact size also makes it suitable for use in digital circuits where space is limited. For these reasons, the SIA466EDJ-T1-GE3 is an excellent choice for applications that require fast switching, noise immunity and low power consumption.

The specific data is subject to PDF, and the above content is for reference