SIA467EDJ-T1-GE3

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SIA467EDJ-T1-GE3 is a type of MOSFET (metal-oxide-semiconductor field-effect transistor). It is part of a family of MOSFET devices called “Single”. The SIA467EDJ-T1-GE3 is a single n-channel enhancement mode MOSFET, which means that when a positive voltage is applied to the gate, the MOSFET switches on and conducts current between the source and the drain. The SIA467EDJ-T1-GE3 is also is a “depletion-mode” MOSFET, meaning it will be off (non-conducting) in the absence of an applied gate voltage. This makes the SIA467EDJ-T1-GE3 suitable for use as a switch in a wide range of applications.

The SIA467EDJ-T1-GE3 has a breakdown voltage of 45 volts, a drain-source on resistance of 4.7 ohms, and a maximum drain current of 4.0 amps at 25°C (77°F). The drain-source resistance decreases as the drain current increases, making the device more efficient at higher currents. The on-resistance of the SIA467EDJ-T1-GE3 is relatively low compared to other MOSFETs, and it is able to switch large currents with minimal energy loss.

The MOSFET is a versatile and widely used component, and the SIA467EDJ-T1-GE3 can be used in a variety of applications. The device can be used to switch high currents, such as the power supply lines in power amplifiers, or to switch low-voltage signals in digital circuits. The SIA467EDJ-T1-GE3 can also be used in motor-control applications, such as controlling the speed of a motor in a fan or a pump. The device can also be used in applications requiring isolated switching, as it has a low on-resistance that minimizes the amount of power dissipated when switching. The device is also suitable for use in high-frequency switching applications, due to its low on-resistance and high switching speed.

The SIA467EDJ-T1-GE3 is a highly efficient and reliable MOSFET, which can be used in a wide range of applications. The device is able to switch current efficiently and quickly, with minimal energy loss. It is also suitable for use in high-frequency switching applications due to its low on-resistance and high switching speed. By understanding the working principles and application fields of the SIA467EDJ-T1-GE3 MOSFET, it is possible to take full advantage of its capabilities.

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