Allicdata Part #: | SIA432DJ-T1-GE3TR-ND |
Manufacturer Part#: |
SIA432DJ-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 12A SC70-6 |
More Detail: | N-Channel 30V 12A (Tc) 3.5W (Ta), 19.2W (Tc) Surfa... |
DataSheet: | SIA432DJ-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | PowerPAK® SC-70-6 |
Supplier Device Package: | PowerPAK® SC-70-6 Single |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.5W (Ta), 19.2W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 800pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SIA432DJ-T1-GE3 is an high voltage power MOSFET (metal–oxide–semiconductor field-effect transistor) product developed by Semiconductor Industry Corp (SIA). It is a single N-channel enhancement mode MOSFET suitable for use in multiple applications ranging from low voltage high current switching to high voltage high current switching.
The SIA432DJ-T1-GE3 MOSFET is often used to switch high-voltage power supplies in a wide variety of electronic systems. It features a dynamic rating of up to 16V and a maximum drain current of 9.2A. The device has a low gate threshold voltage of 1.5V, which makes it ideal for low voltage switching applications, and it has an on-state resistance of 0.001 ohms, which makes it suitable for high current applications.
The working principle of the SIA432DJ-T1-GE3 MOSFET is relatively simple. When a voltage is applied to the gate, current flows from the source to the drain. The gate acts as a gatekeeper, controlling the flow of current through the device. The greater the voltage applied to the gate, the higher the gate threshold voltage and the higher the current will flow through the device. The device is thermally protected by a built-in temperature sensor, which will shut off the device if the temperature rises too high.
The SIA432DJ-T1-GE3 MOSFET has a variety of applications, such as high voltage power supplies, high current switches and power converters. In high voltage power supplies, the SIA432DJ-T1-GE3 is used to switch between two different sources of power. It is also used in power converters where the SIA432DJ-T1-GE3 can act as a voltage regulator by controlling the current flow through the device. In high current applications, the SIA432DJ-T1-GE3 can be used as a switch to control large currents in a range of industrial and automotive applications.
The SIA432DJ-T1-GE3 is one of the most versatile MOSFETs available on the market. It is suitable for a wide range of applications and can handle high voltage and high current switching with ease. It has an easy to understand operating principle and provides built-in thermal protection to keep it from overheating. The SIA432DJ-T1-GE3 is an excellent choice for any application where high voltage or high current switching is required.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SIA443DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 9A SC70-6... |
SIA450DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 240V 1.52A SC... |
SIA417DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 8V 12A SC70-6... |
SIA419DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 12A SC70-... |
SIA411DJ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 12A SC70-... |
SIA408DJ-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 30V 4.5A SC70... |
SIA462DJ-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 30V 12A SC-70... |
SIA477EDJ-T1-GE3 | Vishay Silic... | 0.14 $ | 1000 | MOSFET P-CH 12V 12A SC-70... |
SIA411DJ-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 12A SC70-... |
SIA443DJ-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 9A SC70-6... |
SIA450DJ-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 240V 1.52A SC... |
SIA468DJ-T1-GE3 | Vishay Silic... | 0.18 $ | 1000 | MOSFET N-CH 30V 37.8A SC7... |
SIA416DJ-T1-GE3 | Vishay Silic... | 0.21 $ | 1000 | MOSFET N-CH 100V 11.3A SC... |
SIA465EDJ-T1-GE3 | Vishay Silic... | 0.12 $ | 1000 | MOSFET P-CH 20V 12A SC70-... |
SIA472EDJ-T1-GE3 | Vishay Silic... | 0.12 $ | 1000 | MOSFET N-CH 30V 12A SC70-... |
SIA445EDJT-T1-GE3 | Vishay Silic... | 0.13 $ | 1000 | MOSFET P-CH 20V 12A SC70-... |
SIA448DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 12A SC70-... |
SIA445EDJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 12A SC-70... |
SIA437DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 29.7A SC7... |
SIA433EDJ-T1-GE3 | Vishay Silic... | -- | 12000 | MOSFET P-CH 20V 12A SC-70... |
SIA425EDJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 4.5A SC-7... |
SIA431DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 12A PPAK ... |
SIA469DJ-T1-GE3 | Vishay Silic... | 0.11 $ | 3000 | MOSFET P-CHANNEL 30V 12A ... |
SIA477EDJT-T1-GE3 | Vishay Silic... | 0.13 $ | 1000 | MOSFET P-CH 12V 12A SC70-... |
SIA446DJ-T1-GE3 | Vishay Silic... | 0.19 $ | 1000 | MOSFET N-CH 150V 7.7A SC7... |
SIA466EDJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 25A SC-70... |
SIA432DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 12A SC70-... |
SIA427ADJ-T1-GE3 | Vishay Silic... | 0.15 $ | 1000 | MOSFET P-CH 8V 12A 6SC-70... |
SIA485DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CHANNEL 150V 1.6... |
SIA467EDJ-T1-GE3 | Vishay Silic... | 0.18 $ | 1000 | MOSFET P-CH 12V 31A SC70-... |
SIA415DJ-T1-GE3 | Vishay Silic... | -- | 9000 | MOSFET P-CH 20V 12A SC70-... |
SIA461DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 12A SC70-... |
SIA418DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 12A SC70-... |
SIA406DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 12V 4.5A SC-7... |
SIA440DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 12A SC-70... |
SIA438EDJ-T1-GE3 | Vishay Silic... | 0.16 $ | 1000 | MOSFET N-CH 20V 6A PPAK S... |
SIA439EDJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 28A SC-70... |
SIA413ADJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 12V 12A SC70-... |
SIA430DJT-T1-GE3 | Vishay Silic... | 0.14 $ | 1000 | MOSFET N-CH 20V 12A SC70-... |
SIA483DJ-T1-GE3 | Vishay Silic... | -- | 75000 | MOSFET P-CH 30V 12A SC70-... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...