Allicdata Part #: | SIA413ADJ-T1-GE3-ND |
Manufacturer Part#: |
SIA413ADJ-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 12V 12A SC70-6 |
More Detail: | P-Channel 12V 12A (Tc) 19W (Tc) Surface Mount Powe... |
DataSheet: | SIA413ADJ-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | PowerPAK® SC-70-6 |
Supplier Device Package: | PowerPAK® SC-70-6 Single |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 19W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 57nC @ 8V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 29 mOhm @ 6.7A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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SIA413ADJ-T1-GE3 is one of the most commonly used power transistors available in the market today. This device is capable of providing large amounts of electrical power, up to 55W, and hence is a perfect choice for high-power applications. Its efficient operation and the ability to handle high current makes it ideal for use in a variety of areas such as switching, power conversion, and power amplification, as well as in audio and video applications. Although the SIA413ADJ-T1-GE3 is in wide usage due to its high power capabilities, it is also important to understand its working principle, application field, and advantages.
The SIA413ADJ-T1-GE3 is a single-ended N-channel MOSFET transistor. It is composed of a source, body, and drain-gate terminals, as well as a type of gate oxide layer, which is the semiconductor material that is used to create the electrical insulation between the gate and the body. In operation, the gate oxide layer is used to control the voltage between the gate and the body. When a voltage is applied to the gate, it will generate a field that creates an electrical current between the source and the drain. This current is what is responsible for the transistor’s power, as it is the amount of current that is allowed to flow through the transistor.
The SIA413ADJ-T1-GE3 is commonly used in a variety of applications related to switching, power conversion, and power amplification. One of the most popular uses of this transistor is for power conversion, as it allows for the conversion of one form of energy into another. This is most commonly used for transforming AC signals into DC signals and vice-versa. Additionally, this transistor can provide efficient switching capabilities and is used in applications such as audio and video applications.
The SIA413ADJ-T1-GE3 offers several advantages when compared to other transistors. One of the most notable advantages of this device is its power efficiency. This device is able to handle high currents and this allows it to convert more power than other transistors, thus making it more efficient. Additionally, the design of this transistor allows it to operate at higher temperatures than many other power transistors, which makes it suitable for a wide range of applications.
In conclusion, the SIA413ADJ-T1-GE3 is one of the most widely used power transistors due to its great power capabilities and efficient operation. Its easy-to-understand working principle makes it ideal for a variety of high-power applications such as switching, power conversion, and power amplification. Its various advantages such as power efficiency and high-temperatures operation make it one of the best options available in the market today.
The specific data is subject to PDF, and the above content is for reference
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