SIA430DJ-T1-GE3

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The SIA430DJ-T1-GE3 is a high-performance 45 V N-channel TrenchMOS Logic Level FET (Field Effect Transistor). It has been designed to provide reliable, low on-resistance and low gate threshold voltage in a single SiA430D package. This makes it ideal for applications where fast switching speeds and low power consumption are essential. The SIA430DJ-T1-GE3 has an operational temperature range of -55°C to +150°C and is available in an RoHS compliant lead-free package.

This transistor’s N-Channel configuration allows current to flow between the drain and source when the gate is given a positive voltage. This makes the transistor ideal for a wide range of applications including audio amplifiers and voltage controlled switches. The characteristics of the transistor are optimized for use as a logic device in linear control systems such as digital amplifiers and switching power supplies.

One significant advantage of the SIA430DJ-T1-GE3 is its low on-resistance. The on-resistance is the amount of resistance a transistor has when operating. This is important for many applications as a lower on-resistance will result in a higher amount of current flow and better efficiency. The SIA430DJ-T1-GE3 has an on-resistance of 0.130 ohms at 4.5V and 0.50 ohms at 45V, making it suitable for a wide range of applications.

The SIA430DJ-T1-GE3 is also suitable for applications requiring a low gate threshold voltage. The gate threshold voltage is the voltage required to turn the transistor on. A lower gate threshold voltage will result in a faster switching time, allowing the transistor to respond more quickly to changes in voltage. The gate threshold voltage on the SIA430DJ-T1-GE3 is 0.5V, which makes it suitable for use in high speed logic applications.

In summary, the SIA430DJ-T1-GE3 is a high performance, low power consumption logic level FET with an exceptional on-resistance and low gate threshold voltage. It has a wide operational temperature range and is available in a RoHS compliant lead-free package. It is ideal for applications where fast switching speeds and low power consumption are essential.

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