SIA468DJ-T1-GE3

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The SIA468DJ-T1-GE3 is a single-channel silicon-gate junction field effect transistor (JFET) designed for a wide range of applications. It has an excellent balance between gain, bandwidth and cutoff frequency. Its low noise characteristics make it suitable for high frequency applications. Its low power consumption consumption and long lifetime make it a great choice for long-term use.

The SIA468DJ-T1-GE3 is a N-Channel Junction Field Effect Transistor (JFET). It is designed to provide a high impedance input stage in low power applications. The device is constructed with a N-Channel JFET semiconductor material with a PN junction connected to the gate and substrate. The channel length of the device is 9 µm and it has a breakdown voltage of 20 V.

The SIA468DJ-T1-GE3 has a positive temperature coefficient. This means that as the temperature increases, the gain decreases and the device is more stable. The device is designed to offer excellent transconductance and high frequency response with a maximum frequency of 200 MHz.

The SIA468DJ-T1-GE3 is typically used in single-ended or differential amplifier circuits, such as Class A, AB, or D audio amplifiers. It can also be used in current and voltage sources and as voltage controlled resistors or current controlled resistors for applications such as switching and modulation. The device can also be used in analog voltage and current sensing circuits.

The operation of the device begins with the application of an external voltage on the gate. When this happens, the gate-to-channel voltage increases, causing the conductance of the device to increase. This changes the device current and output voltage. The changes in the device current and output voltage are the basis for the operation of the device.

The SIA468DJ-T1-GE3 has several advantages over other types of transistors, such as high gain, low input capacitance, and low on-resistance. Additionally, it is radiation tolerant due to its superior packaging. Furthermore, the device is well suited for applications that require low noise. The device is also well suited for applications that require reliable operation in harsh conditions, such as high temperature and shock.

In conclusion, the SIA468DJ-T1-GE3 is a single-channel silicon-gate junction field effect transistor (JFET) designed for a wide range of applications. Its features make the device ideal for current and voltage sensing circuits, audio amplifiers, and other types of applications. With its low power consumption, low noise and long lifetime, it is an ideal choice for long-term use.

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