
Allicdata Part #: | SIA414DJ-T1-GE3TR-ND |
Manufacturer Part#: |
SIA414DJ-T1-GE3 |
Price: | $ 0.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 8V 12A SC70-6 |
More Detail: | N-Channel 8V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface ... |
DataSheet: | ![]() |
Quantity: | 9000 |
1 +: | $ 0.32000 |
10 +: | $ 0.31040 |
100 +: | $ 0.30400 |
1000 +: | $ 0.29760 |
10000 +: | $ 0.28800 |
Vgs(th) (Max) @ Id: | 800mV @ 250µA |
Package / Case: | PowerPAK® SC-70-6 |
Supplier Device Package: | PowerPAK® SC-70-6 Single |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.5W (Ta), 19W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 4V |
Vgs (Max): | ±5V |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 11 mOhm @ 9.7A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.2V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 8V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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.The SIA414DJ-T1-GE3 is a single transistor type field effect transistor (FET) used in a variety of applications. It is a short-channel, lightly-doped MOSFET transistors with enhancement-mode operation and excellent scalability. It features low on-state resistance very low gate charge, and low output capacitance, which make it suitable for high-frequency switching applications.
The SIA414DJ-T1-GE3 field effect transistor has a gate-source voltage (Vgs) of 2V, a drain-source voltage (Vds) of 8V, a drain current (Id) of 0.4A, and a maximum operating temperature of 150 degrees Celsius. It has a typical on-resistance ( Ron) of 45mω and a gate-source capacitance of 40pF. The device is a RoHS-compliant, lead-free, and halogen-free product.
The working principle of the field effect transistor is based on the fact that if a voltage is applied between a gate and the source, it creates an electric field, which then controls the current flows through the channel connecting the source and the drain. The strength of the electric field determines how much current is allowed to flow through the channel. Thus, when a higher gate voltage is applied, more current is allowed to flow and vice versa.
The SIA414DJ-T1-GE3 is typically used as a switch in various applications including switching applications, power management, and power supply circuits. It can also be used in high speed devices, such as digital clock and frequency dividers, as well as in analog circuits, such as those used in voltage regulators and low noise amplifiers.
In switching applications, the SIA414DJ-T1-GE3 can be used to control the current flow by acting as an electronic switch. When a voltage is applied to the gate, the electric field generated could either act as an “open switch” or “closed switch”, depending on the value of the applied voltage. When the voltage is low, the gate acts as an open switch, allowing current to pass through the channel and when the voltage is high, it acts as a closed switch, preventing current from passing. This allows the device to be used to control the flow of current in different applications.
In power management and power supply circuits, the SIA414DJ-T1-GE3 can be used as a charge pump to boost the output voltage or to regulate the output voltage. The device can also be used as a voltage divider in order to reduce the voltage of the main power supply.
The SIA414DJ-T1-GE3 is a versatile device that is suitable for various applications. Its high-frequency switching capability, low on-state resistance, and low output capacitance make it an ideal choice for high-frequency switching applications, power management circuits, and analog circuits.
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