SIA414DJ-T1-GE3 Allicdata Electronics
Allicdata Part #:

SIA414DJ-T1-GE3TR-ND

Manufacturer Part#:

SIA414DJ-T1-GE3

Price: $ 0.32
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 8V 12A SC70-6
More Detail: N-Channel 8V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface ...
DataSheet: SIA414DJ-T1-GE3 datasheetSIA414DJ-T1-GE3 Datasheet/PDF
Quantity: 9000
1 +: $ 0.32000
10 +: $ 0.31040
100 +: $ 0.30400
1000 +: $ 0.29760
10000 +: $ 0.28800
Stock 9000Can Ship Immediately
$ 0.32
Specifications
Vgs(th) (Max) @ Id: 800mV @ 250µA
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 4V
Vgs (Max): ±5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 11 mOhm @ 9.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

.

The SIA414DJ-T1-GE3 is a single transistor type field effect transistor (FET) used in a variety of applications. It is a short-channel, lightly-doped MOSFET transistors with enhancement-mode operation and excellent scalability. It features low on-state resistance very low gate charge, and low output capacitance, which make it suitable for high-frequency switching applications.

The SIA414DJ-T1-GE3 field effect transistor has a gate-source voltage (Vgs) of 2V, a drain-source voltage (Vds) of 8V, a drain current (Id) of 0.4A, and a maximum operating temperature of 150 degrees Celsius. It has a typical on-resistance ( Ron) of 45mω and a gate-source capacitance of 40pF. The device is a RoHS-compliant, lead-free, and halogen-free product.

The working principle of the field effect transistor is based on the fact that if a voltage is applied between a gate and the source, it creates an electric field, which then controls the current flows through the channel connecting the source and the drain. The strength of the electric field determines how much current is allowed to flow through the channel. Thus, when a higher gate voltage is applied, more current is allowed to flow and vice versa.

The SIA414DJ-T1-GE3 is typically used as a switch in various applications including switching applications, power management, and power supply circuits. It can also be used in high speed devices, such as digital clock and frequency dividers, as well as in analog circuits, such as those used in voltage regulators and low noise amplifiers.

In switching applications, the SIA414DJ-T1-GE3 can be used to control the current flow by acting as an electronic switch. When a voltage is applied to the gate, the electric field generated could either act as an “open switch” or “closed switch”, depending on the value of the applied voltage. When the voltage is low, the gate acts as an open switch, allowing current to pass through the channel and when the voltage is high, it acts as a closed switch, preventing current from passing. This allows the device to be used to control the flow of current in different applications.

In power management and power supply circuits, the SIA414DJ-T1-GE3 can be used as a charge pump to boost the output voltage or to regulate the output voltage. The device can also be used as a voltage divider in order to reduce the voltage of the main power supply.

The SIA414DJ-T1-GE3 is a versatile device that is suitable for various applications. Its high-frequency switching capability, low on-state resistance, and low output capacitance make it an ideal choice for high-frequency switching applications, power management circuits, and analog circuits.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "SIA4" Included word is 40
Part Number Manufacturer Price Quantity Description
SIA440DJ-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 40V 12A SC-70...
SIA416DJ-T1-GE3 Vishay Silic... 0.21 $ 1000 MOSFET N-CH 100V 11.3A SC...
SIA441DJ-T1-GE3 Vishay Silic... -- 21000 MOSFET P-CH 40V 12A SC-70...
SIA413DJ-T1-GE3 Vishay Silic... -- 12000 MOSFET P-CH 12V 12A SC70-...
SIA445EDJT-T1-GE3 Vishay Silic... 0.13 $ 1000 MOSFET P-CH 20V 12A SC70-...
SIA439EDJ-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 20V 28A SC-70...
SIA417DJ-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 8V 12A SC70-6...
SIA445EDJ-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 20V 12A SC-70...
SIA419DJ-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 20V 12A SC70-...
SIA444DJT-T1-GE3 Vishay Silic... -- 15000 MOSFET N-CH 30V 12A SC-70...
SIA431DJ-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 20V 12A PPAK ...
SIA443DJ-T1-E3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 20V 9A SC70-6...
SIA446DJ-T1-GE3 Vishay Silic... 0.19 $ 1000 MOSFET N-CH 150V 7.7A SC7...
SIA430DJ-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 20V 12A SC70-...
SIA450DJ-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 240V 1.52A SC...
SIA400EDJ-T1-GE3 Vishay Silic... -- 18000 MOSFET N-CH 30V 12A SC-70...
SIA437DJ-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 20V 29.7A SC7...
SIA449DJ-T1-GE3 Vishay Silic... -- 12000 MOSFET P-CH 30V 12A SC70-...
SIA414DJ-T1-GE3 Vishay Silic... -- 9000 MOSFET N-CH 8V 12A SC70-6...
SIA477EDJT-T1-GE3 Vishay Silic... 0.13 $ 1000 MOSFET P-CH 12V 12A SC70-...
SIA408DJ-T1-GE3 Vishay Silic... -- 3000 MOSFET N-CH 30V 4.5A SC70...
SIA483DJ-T1-GE3 Vishay Silic... -- 75000 MOSFET P-CH 30V 12A SC70-...
SIA415DJ-T1-GE3 Vishay Silic... -- 9000 MOSFET P-CH 20V 12A SC70-...
SIA411DJ-T1-E3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 20V 12A SC70-...
SIA472EDJ-T1-GE3 Vishay Silic... 0.12 $ 1000 MOSFET N-CH 30V 12A SC70-...
SIA411DJ-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 20V 12A SC70-...
SIA429DJT-T1-GE3 Vishay Silic... -- 9000 MOSFET P-CH 20V 12A SC-70...
SIA467EDJ-T1-GE3 Vishay Silic... 0.18 $ 1000 MOSFET P-CH 12V 31A SC70-...
SIA426DJ-T1-GE3 Vishay Silic... -- 892 MOSFET N-CH 20V 4.5A SC70...
SIA418DJ-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 12A SC70-...
SIA443DJ-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 20V 9A SC70-6...
SIA468DJ-T1-GE3 Vishay Silic... 0.18 $ 1000 MOSFET N-CH 30V 37.8A SC7...
SIA427ADJ-T1-GE3 Vishay Silic... 0.15 $ 1000 MOSFET P-CH 8V 12A 6SC-70...
SIA465EDJ-T1-GE3 Vishay Silic... 0.12 $ 1000 MOSFET P-CH 20V 12A SC70-...
SIA436DJ-T1-GE3 Vishay Silic... -- 18000 MOSFET N-CH 8V 12A SC70-6...
SIA432DJ-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 12A SC70-...
SIA433EDJ-T1-GE3 Vishay Silic... -- 12000 MOSFET P-CH 20V 12A SC-70...
SIA469DJ-T1-GE3 Vishay Silic... 0.11 $ 3000 MOSFET P-CHANNEL 30V 12A ...
SIA462DJ-T1-GE3 Vishay Silic... -- 3000 MOSFET N-CH 30V 12A SC-70...
SIA461DJ-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 20V 12A SC70-...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics