| Allicdata Part #: | SIA430DJT-T1-GE3-ND |
| Manufacturer Part#: |
SIA430DJT-T1-GE3 |
| Price: | $ 0.11 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 20V 12A SC70-6 |
| More Detail: | N-Channel 20V 12A (Tc) 19.2W (Tc) Surface Mount Po... |
| DataSheet: | SIA430DJT-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.11200 |
| 10 +: | $ 0.10864 |
| 100 +: | $ 0.10640 |
| 1000 +: | $ 0.10416 |
| 10000 +: | $ 0.10080 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | PowerPAK® SC-70-6 |
| Supplier Device Package: | PowerPAK® SC-70-6 Single |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 19.2W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 800pF @ 10V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 13.5 mOhm @ 7A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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SIA430DJT-T1-GE3 is a type of transistor. It is classified as a field effect transistor (FET), more specifically a metal-oxide-semiconductor FET (MOSFET). Like the other types of transistors, a MOSFET utilizes a substrate and control gate to change a current flow. This process is known as switching, and is used within a variety of electronic devices. The SIA430DJT-T1-GE3 is a single type of MOSFET.
The primary purpose of the SIA430DJT-T1-GE3 is to provide erosion-resistant isolation in residential and commercial buildings. They are often hidden within exterior walls, used to block air and water from entering buildings. They can also be used to increase seismic stability of buildings.
The SIA430DJT-T1-GE3 utilizes the principle of switching, which is the process of changing an electric current from a low to a high voltage. This is done by charging the substrate with an electric charge. When the charge reaches the control gate, it sparks an electric current to the substrate. This causes a breakdown of the semiconductor material and allows electricity to flow through.
The SIA430DJT-T1-GE3 can be used in a variety of applications. These include but are not limited to: air conditioning compressors, refrigerators, automatic gates, overhead door openers, motor starters, white goods, and electronic equipment.
In addition to the switching process, the SIA430DJT-T1-GE3 has other advantages. It has an ultra-wide temperature range and is resistant to both vibration and shock. Its built-in thermal protection feature prevents it from exceeding its maximum temperature. Its high transconductance makes it an ideal choice for low-noise applications.
Overall, the SIA430DJT-T1-GE3 is an ideal choice for those in the process of building a residential or commercial building. It provides strong erosion-resistant isolation and can be used for a variety of applications, including air conditioning compressors, refrigerators, automatic gates, overhead door openers, motor starters, white goods and electronic equipment. It is resistant to vibration and shock, and has a maximum temperature protection feature.
The specific data is subject to PDF, and the above content is for reference
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SIA430DJT-T1-GE3 Datasheet/PDF