| Allicdata Part #: | SMMBFJ309LT1GOSTR-ND |
| Manufacturer Part#: |
SMMBFJ309LT1G |
| Price: | $ 0.14 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | JFET N-CH 25V 30MA SOT23 |
| More Detail: | RF Mosfet N-Channel JFET SOT-23-3 (TO-236) |
| DataSheet: |  SMMBFJ309LT1G Datasheet/PDF |
| Quantity: | 3000 |
| 3000 +: | $ 0.12890 |
| 6000 +: | $ 0.12058 |
| 15000 +: | $ 0.11227 |
| 30000 +: | $ 0.10645 |
Specifications
| Series: | Automotive, AEC-Q101 |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | N-Channel JFET |
| Frequency: | -- |
| Gain: | -- |
| Current Rating: | 30mA |
| Noise Figure: | -- |
| Power - Output: | -- |
| Voltage - Rated: | 25V |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 (TO-236) |
Description
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SMMBFJ309LT1G is a type of RF MOSFET transistor, which is widely used in multiple fields of application. This type of transistor is based on a construction with a metal oxide semiconductor field-effect transistor (MOSFET), on which a metal-oxide-semiconductor (MOS) gate is used to control source and drain current. Due to its very low on-resistance, SMMBFJ309LT1G is suitable for a wide range of radio-frequency (RF) applications, such as wireless communication systems.The working principle of SMMBFJ309LT1G is quite complex. Basically, an extremely thin metal oxide layer, composed of either silicon or polysilicon, is laid on top of a metal gate. The MOS gate is then connected to the source and drain electrodes, and the drain electrode acts as the control element to the MOS gate. There are two p-n junctions in the MOSFET, one between the source and drain and the other between the gate and the drain. When a voltage is applied to the gate, a depletion region forms along the p-n junction between the source and drain, and the width of this depletion region depends on the voltage applied to the gate. The greater the voltage applied to the gate, the larger the depletion region, which in turn reduces or increases the current flowing through the drain.When SMMBFJ309LT1G is used in RF applications, the field-effect transistor can be used as either a switch or an amplifier. For example, when used as an amplifier, the field-effect transistor can be used to amplify small signals by controlling the current flowing through the drain. The amplifier is configured by biasing the gate voltage, which determines the amount of current flowing through the drain.Since SMMBFJ309LT1G is a MOSFET transistor, it operates very efficiently and has a very low gate current. This makes it ideal for high-performance RF applications such as amplifiers, mixers, filters and amplifiers. Furthermore, the gate capacitance of the transistor is very small, so it can also be used in low-noise RF applications. SMMBFJ309LT1G also has an excellent thermal stability, thus making it suitable for applications where the surface temperature may fluctuate.In summary, SMMBFJ309LT1G is a type of RF MOSFET transistor that is widely used in radio-frequency applications due to its very low on-resistance. Its working principle is based on MOSFET construction, where the MOS gate is used to control the current flowing through the drain. The transistor operates very efficiently and has a very low gate current, making it ideal for high-performance RF applications. It also has an excellent thermal stability, making it suitable for applications where the surface temperature may fluctuate.
The specific data is subject to PDF, and the above content is for reference
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