Allicdata Part #: | SMMBT3906LT1GOSTR-ND |
Manufacturer Part#: |
SMMBT3906LT1G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 40V 0.2A SOT23 |
More Detail: | Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 300m... |
DataSheet: | SMMBT3906LT1G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.03347 |
6000 +: | $ 0.02911 |
15000 +: | $ 0.02474 |
30000 +: | $ 0.02328 |
75000 +: | $ 0.02183 |
150000 +: | $ 0.01940 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 10mA, 1V |
Power - Max: | 300mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | MMBT3906 |
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?The SMMBT3906LT1G belongs to a type of electronic component known as transistors, of which the two main categories are bipolar junction transistors (BJT) and field effect transistors (FET). This type of transistor, the SMMBT3906LT1G, falls into the BJT – Single category. Single BJT transistors are those that feature a single region in which the current flow is modulated. The SMMBT3906LT1G is a general-purpose, low-voltage NPN transistor, designed for medium-speed operations such as switching and amplified signals.
The SMMBT3906LT1G application field is broad, and its utility is highly diverse. Firstly, their intended local applications include personal computers, consumer electronic products, and motor drives, where reliable operations are required. Thanks to its high-speed switching characteristics, the SMMBT3906LT1G is also used in switching applications such as relays, motors, and solenoids. Finally, the SMMBT3906LT1G is also an excellent choice for use in different types of amplifiers, from basic common-emitter amplifiers to long–tailed pair amplifiers. The device can also be used in other applications where it is a good fit when moderate-power and voltage ratings are desired.
The working principle of the SMMBT3906LT1G can be understood in basic terms: the idea is that the current flow through the device is determined by the voltage applied to the base of the device. This can be demonstrated using a basic circuit, which consists of three main parts—the emitter, the base, and the collector, which can be likened to the source of current, the control, and the load, respectively. When the device is turned on, the voltage at the base will cause the electrons in the emitter to accelerate and push toward the collector. Some of these electrons will pass through the base and make their way through to the collector, thereby passing the current from the emitter to the collector.
Classically, a single BJT’s operation can be understood from the input and output characteristics in the form of an I–V graph, with the current flowing through the device on the y-axis, and the input voltage across the base and the transistor on the x-axis. It can be seen from this graph that, as the voltage across the base of the device increases, the current flowing through it will also increase exponentially.
In summary, the SMMBT3906LT1G is a general-purpose, low-voltage NPN transistor, designed for medium-speed operations such as switching and amplified signals. Its application field is broad, and most notably includes personal computers, consumer electronic products, and motor drives, as well as more specialized applications such as switching relays, motors, and solenoids and amplifiers of various kinds. In practice, the working principle of single BJTs is straightforward, involving the modulation of current flow according to the voltage applied to the base of the device.
The specific data is subject to PDF, and the above content is for reference
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