
Allicdata Part #: | SPB80N03S2-03-ND |
Manufacturer Part#: |
SPB80N03S2-03 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 80A D2PAK |
More Detail: | N-Channel 30V 80A (Tc) 300W (Tc) Surface Mount PG-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | PG-TO263-3-2 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7020pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 3.1 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SPB80N03S2-03 is a N-channel, enhancement-mode MOSFET that is made using Silicon-on-Insulator (SOI) technology.
MOSFETs are a type of field-effect transistor (FET), which is a semiconductor device with no gate current and is one of the simplest and most commonly used electronic components. FETs are used to control current and voltage in a circuit, and they are controlled by an electric field. The SPB80N03S2-03 has an n-channel, meaning it is a type of FET whose conducting channel is formed by electrons instead of holes.
The SPB80N03S2-03 is suitable for use in switching applications and provides very low on-resistance and very low gate charge. The device features a logic-level gate threshold voltage, which functions as a switching control signal. This type of transistor enables higher efficiency and power density than traditional transistors.
The working principle of the SPB80N03S2-03 is based on the transistor action. When a signal is applied to the gate of the transistor, it will turn on and allow signal current to flow through the drain and source of the device. The signal current is controlled by the voltage applied to the gate of the transistor, and the signal can be used to control other electronic components.
The SPB80N03S2-03 has several main applications, including load switch, power sourcing and power sinking, DC-DC conversion, DC-to-AC conversion, and switching regulators. This device is suitable for both low-voltage and power applications, and its high switching speed makes it ideal for high-speed applications. It is also suitable for use in automotive and other industrial applications.
The SPB80N03S2-03 is a versatile device that can be used in a wide range of applications ranging from low-power logic and interfaces to high-voltage power applications. Its unique features, such as low on-resistance, low gate charge, and reduced power consumption, make it ideal for use in many applications where power efficiency, high bandwidth, and high speed are required. Additionally, the device is suitable for use in high-temperature environments with its high-temperature-resistant packaging.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SPB80N06S08ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 80A D2PAK... |
SPB80N04S2L-03 | Infineon Tec... | -- | 1000 | MOSFET N-CH 40V 80A D2PAK... |
SPB80N06S2-05 | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 80A D2PAK... |
SPB80N03S2L-06 G | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 80A D2PAK... |
SPB80N03S2L-06 | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 80A D2PAK... |
SPB80N06S2L-11 | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 80A D2PAK... |
SPB80N03S2L-05 G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 80A D2PAK... |
SPB80N06S2-H5 | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 80A D2PAK... |
SPB80N03S2-03 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 80A D2PAK... |
SPB80N06S2-09 | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 80A D2PAK... |
SPB80N06S2L-H5 | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 80A D2PAK... |
SPB80N06S2L-05 | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 80A D2PAK... |
SPB820P-BCQ1 | H&D Wire... | 32.05 $ | 40 | RF TXRX MOD WIFI CHIP + U... |
SPB80N03S2L-04 G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 80A D2PAK... |
SPB80N04S2-H4 | Infineon Tec... | -- | 1000 | MOSFET N-CH 40V 80A D2PAK... |
SPB80N03S203GATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 80A D2PAK... |
SPB80N03S2L-03 | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 80A D2PAK... |
SPB80N08S2-07 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 75V 80A D2PAK... |
SPB80P06P | Infineon Tec... | -- | 1000 | MOSFET P-CH 60V 80A D2PAK... |
SPB80N10L G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 80A TO-2... |
SPB80N04S2-04 | Infineon Tec... | -- | 1000 | MOSFET N-CH 40V 80A D2PAK... |
SPB80N06S2L-06 | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 80A D2PAK... |
SPB80N03S2L-05 | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 80A D2PAK... |
SPB80P06PGATMA1 | Infineon Tec... | -- | 1000 | MOSFET P-CH 60V 80A TO-26... |
SPB80N03S2L06T | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 80A D2PAK... |
SPB80N03S2L-03 G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 80A D2PAK... |
SPB800-BCP1 | H&D Wire... | 17.05 $ | 9 | RF TXRX MODULE WIFI CHIP ... |
SPB80N03S2L05T | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 80A D2PAK... |
SPB80N06S2-08 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 80A D2PAK... |
SPB80N03S2L-04 | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 80A D2PAK... |
SPB80N06S2-07 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 80A D2PAK... |
SPB80N06S2L-07 | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 80A D2PAK... |
SPB80N06S2L-09 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 80A D2PAK... |
SPB80N08S2L-07 | Infineon Tec... | -- | 1000 | MOSFET N-CH 75V 80A D2PAK... |
SPB80N10L | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 80A D2PA... |
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