SPB80N03S2L-04 G

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The SPB80N03S2L-04 G is a N-channel enhancement-mode metal–oxide–semiconductor field-effect transistor (MOSFET) produced by Infineon Technologies. It features low gate charge, low on-state resistance, and fast switching.

This product is ideal for applications that need high power density, such as switching power supplies, DC-DC conversion, motor control, and audio amplifiers. Its high frequency and low gate charge make it particularly useful for high switching frequency and high-speed logic level applications. This MOSFET has an operating temperature of -55°C to 150°C and a maximum drain current of 81A (T logic).

Working Principle

MOSFETs are semiconductor devices that act as electrically controlled switches. They are made up of a semiconductor material with a metal oxide layer between the source (S) and drain (D) terminals. An electric field generated by the gate terminal (G) can control the movement of electrons and holes between the source and drain terminals. This enables the MOSFET to act as a voltage-controlled switch.

The SPB80N03S2L-04 G works on the principle of resistance modulation or “resistance switching”. When a negative voltage is applied to the gate terminal, the MOSFET behaves like a resistor, allowing current to flow from the source to the drain. When a positive voltage is applied to the gate terminal, the MOSFET behaves like a transistor, blocking the current from flowing from the source to the drain.

The SPB80N03S2L-04 G has a low on-state resistance, which allows for efficient power transfer compared to other MOSFETs. Its low gate charge reduces switching losses and thus increases power efficiency.

Application Field

The SPB80N03S2L-04 G is a widely used power MOSFET, particularly suitable for high-power applications such as DC-DC converters, switching power supplies, motor control systems, and audio amplifiers. It is also used in high-frequency circuits, as its low gate charge makes it suitable for high switching frequency applications. This MOSFET is also used in automotive and industrial applications.

This MOSFET is ideal for high-density applications that require high current and low power loss. It also has a wide operating temperature range, making it suitable for a variety of environments. Thanks to its low on-state resistance, it is also an ideal choice for current switching applications.

Conclusion

The SPB80N03S2L-04 G is a widely used power MOSFET, suitable for a variety of applications. Its low gate charge, low on-state resistance, and wide operating temperature range make it particularly suitable for high-density, high-power applications. It is also an ideal choice for high-frequency and current switching applications.

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