SPB80N04S2L-03

SPB80N04S2L-03 Application Field and Working Principle

SPB80N04S2L-03 is a N-channel enhancement-mode power MOSFET transistor developed by ST Microelectronics. It is one of latest MOSFETs in the market, with enhanced characteristics. The following section will describe the application field of this transistor, working principle and its features.

Application Field

SPB80N04S2L-03 is basically used for the operations of low-power switching applications. It is a 70V device, suitable for a variety of applications including DC/DC converters, AC adapters, motor control, LED lighting, linear and switching converters, as well as power switches.

Working Principle

The working principle of the SPB80N04S2L-03 power MOSFET is similar to any other MOSFET. It is composed of an insulated gate electrode that is electrically isolated from the semiconducting n-type material used to form the device. When voltage is applied to the gate of the MOSFET in the form of a signal, it controls the current flowing between the source and the drain of the device. The amount of current being controlled is determined by the amount of voltage applied to the gate.

When positive voltages are applied to the gate of a P-channel MOSFET a depletion region is created inside the transistor\'s channel which increases the resistance to the current flow. In the similar way, when a negative voltage is applied to the gate of an N-channel MOSFET, a depletion region is also created inside the transistor\'s channel, decreasing the resistance to the current flow.

Features

The features of SPB80N04S2L-03 are:

• Very low gate threshold voltage.
• Very low on-resistance.
• Suitable for low power switching applications.
• CMOS technology with superior ESD protection.
• Very low input and output capacitance.
• Operates at a maximum drain-source voltage of 70 V.

The SPB80N04S2L-03 power MOSFET has superior electrical characteristics compared to the conventional MOSFETs. This makes it suitable for high frequency, high efficiency and low power applications. Furthermore, its exact protection and low feedback capacitance are design elements that make it an ideal choice.

In conclusion, the SPB80N04S2L-03 is an enhancement-mode power MOSFET transistor developed by ST Microelectronics, suitable for low power switching applications. Its features include a very low gate threshold voltage, a very low on-resistance, and superior electrical characteristics compared to the conventional MOSFETs.