SPB80N06S2-09

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SPB80N06S2-09 is the Vddrain Field-Effect Transistor (FET) manufactured by Infineon Technologies, a company specializing in innovative semiconductor solutions. It belongs to the Single-Lateral MOSFET category of power FETs.

The single-lateral MOSFET is a type of FET that operates by using a single gate for controlling the electrical current flow. It works by utilizing a voltage drop across an insulated barrier layer that is sandwiched between two metallic gate electrodes. The gate electrode on the top side of the barrier layer is connected to the drain which creates the voltage drop across the barrier layer when current flows through. This voltage drop controls the current flowing through the channel by limiting the amount of carriers that can pass through the barrier layer, thus regulating the level of current.

The main application field of the SPB80N06S2-09 is power supply switchgear. It has a maximum drain-source voltage of 75 volts, a maximum drain current of 80 amperes, an RDSon up to 2.1 milliOhms and a gate charge rating of 70 nC. Given these parameters, the SPB80N06S2-09 device can be used in a variety of power switching applications.

The SPB80N06S2-09 also provides an excellent combination of low on-resistance and low gate charge making it an ideal candidate for use in switched mode power supplies, inverters, motor drives, and personal electronics. It offers high voltage protection and EMI reduction, while also providing very low operational power consumption.

The working principle of the SPB80N06S2-09 is straightforward and easy to understand. When a voltage is applied to the gate electrode of the device, the field-effect junction becomes de-conductive, allowing current to flow freely between the drain and source electrodes. The resolution of the device is based on the amount of voltage applied to the gate electrode to measure the current that is flowing through the device. The device provides very accurate metering of the current flow due to its low on-resistance.

The SPB80N06S2-09 is a cost-effective and reliable solution for a variety of power switching applications. It provides excellent current flow when compared to other single-lateral MOSFETs, and offers very low power consumption to reduce operating costs. Its accuracy and compatibility make it an ideal solution for a wide range of power switching projects and applications.

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