SPB80N03S2L05T

The SPB80N03S2L05T is a high power surface mount N-channel MOSFET transistor designed for high switching frequency applications. It is a mature and reliable product designed with an integrated shield planar technology to improve drain-source breakdown voltage, low total gate charge and low gate-source threshold voltage while reducing RDS(ON) and gate capacity.

The SPB80N03S2L05T is a part of the N-channel depletion mode MOSFETs, which means that its drain-source current flows at all times, then, by application of a negative gate to source voltage, it is able to deplete the free electron concentration in the channel region underneath the gate oxide and thus reduces drain-source current.

The SPB80N03S2L05T is useful in many applications, including power switching, power control, radio frequency (RF) power amplifiers, in home appliances, DC/DC converters, gate drive circuits and many automotive applications. It features an excellent gate threshold voltage of 2.0V and a high drain current of 80A.

The drain-source voltage of the SPB80N03S2L05T is rated at 80V, so it is suitable for larger power applications. The transistor also has a very low RDS(ON) which limits the power dissipation, making it an ideal choice for high frequency switching applications. Additionally, the low gate-source threshold voltage of 2V improves the level shifting functionality and offers good switching performance.

The working principle of the SPB80N03S2L05T is based on the gate control effect of the MOSFETs. The gate control effect is dependent on the relationship between the gate voltage and the drain-source current. With the gate voltage applied, a varying electric field is established between the gate and the source of the MOSFET.

When the gate voltage reaches certain level, the electric field overcomes the surface energy barrier and the channel region of the MOSFET becomes more conductive. This increases the channel conductivity and thus, the drain-source current increases as well, opening the MOSFET switch. Conversely, when the gate voltage is reduced, the electric field decreases, the channel region becomes less conductive and the MOSFET switch will be closed.

The SPB80N03S2L05T is a high performance power switch suitable for many applications. Its high drain current and low RDS(ON) makes it ideal for applications involving high power switching, radio frequency (RF) power amplifiers, in home appliances, DC/DC converters, gate drive circuits and many automotive applications. Furthermore, its integrated shield planar technology enables it to provide excellent drain-source breakdown voltage, low total gate charge and low gate-source threshold voltage.

In conclusion, the SPB80N03S2L05T is a highly reliable N-channel MOSFET transistor designed for high switching frequency applications. Its low gate-source threshold voltage, high current, and low RDS(ON) makes it suitable for a wide range of applications.