SPB80N06S2-H5

The SPB80N06S2-H5 is a surface mount Power MOSFET transistor device, designed for use in power management applications such as DC-DC converters, motor control, audio amplifiers and other power switching applications.

Application Field

The SPB80N06S2-H5 is a single N-channel enhancement mode MOSFET transistor designed for use in multiple power management applications like DC-DC converters, motor control, audio amplifiers and other power switching applications. The device is well-suited for both 12 V and 24 V applications due to its low on-state resistance (RDS(on)), providing superior low-temperature performance and high packing density.

This device features easy-to-use logic level gate threshold voltage (VGS), allowing the device to be driven easily with a logic family control. Bi-directional ESD protection helps protect the device against inadvertent damage caused by electrical transients.

Working Principle

The SPB80N06S2-H5 is a single N-channel enhancement MOSFET device. The enhancement mode device operates in either linear or switching applications. The device consists of a semiconductor channel in the drain to source region between the source and drain terminals. The channel is formed between the source and drain regions by applying a voltage between the gate and source terminals, which creates a potential barrier for electrons. This potential barrier is controlled by the gate voltage, allowing current to flow through the channel very easily.

The device is also extremely fast switching with a low gate charge (Qg) and low total gate-source capacitance (Cgs) resulting in excellent switching characteristics. The device also exhibits a low leakage current in the off-state, which helps reduce power consumption in the circuit.

The SPB80N06S2-H5 also has a wide drain-source breakdown voltage (BVDSS) offering good avalanche capability and a low forward voltage drop (VF), offering excellent performance in switching applications. In addition, the device offers a very fast and soft recovery time (trr), helping to reduce capacitive ringing during high-speed switching applications.

Summary

The SPB80N06S2-H5 is a single N-channel enhancement MOSFET device, designed for use in power management applications such as DC-DC converters, motor control, audio amplifiers and other power switching applications. The device features easy-to-use logic level gate threshold voltage (VGS), allowing the device to be driven easily with a logic family control. The device also exhibits a low leakage current in the off-state, helping reduce power consumption in the circuit. In addition, the device offers a very fast and soft recovery time (trr) with a low gate charge (Qg), helping to reduce capacitive ringing during high-speed switching applications.