
Allicdata Part #: | SPB80P06P-ND |
Manufacturer Part#: |
SPB80P06P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 60V 80A D2PAK |
More Detail: | P-Channel 60V 80A (Tc) 340W (Tc) Surface Mount PG-... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 5.5mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | PG-TO263-3-2 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 340W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5033pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 173nC @ 10V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 23 mOhm @ 64A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SPB80P06P transistor is a p-channel enhancement mode silicon gate field effect transistor (FET). It is often used in high frequency switch mode applications, including audio amplifiers, voltage switching applications, and 2-3 pole low pass filters. It is also used in small power amplifier designs and power management circuits.
The SPB80P06P transistor is ideal for applications in which low-voltage operation and fast switching are required. It has a low gate-source voltage requirement and a low on-resistance of 8Ω. This makes it suitable for use in high-current, low-voltage applications such as low-power audio amplifiers and power management applications. Additionally, the transistor has a high current rating of 80A and a fast switching speed, making it ideal for high frequency switch mode applications.
The SPB80P06P transistor has a very straightforward working principle. It consists of two metal–oxide–semiconductor (MOS) transistors connected in a “source follower” configuration. A voltage is applied to the gate of the primary MOS transistor, which then adjusts the voltage at the source of the secondary MOS transistor. This voltage can be adjusted by changing the voltage applied to the gate. The increased or decreased voltage at the source of the secondary MOS transistor then controls the current passing through the device.
In addition to its applications in switch mode designs, the SPB80P06P transistor can also be used in analog circuits. In these applications, it is used in combination with resistors and capacitors to provide linear operation and voltage amplification. It can be used as a voltage follower to match an analog signal to the voltage level of another circuitry. It can also be used to obtain higher open loop gain and better linearity in an amplifier design.
The SPB80P06P transistor is an excellent choice for many applications due to its low-voltage requirements, fast switching speeds, and high current rating. It is ideal for use in high-current, low-voltage applications such as low-power audio amplifiers and power management applications. It is also excellent for use in analog circuits to obtain higher open loop gain and better linearity.
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Part Number | Manufacturer | Price | Quantity | Description |
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SPB80N06S08ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 80A D2PAK... |
SPB80N04S2L-03 | Infineon Tec... | -- | 1000 | MOSFET N-CH 40V 80A D2PAK... |
SPB80N06S2-05 | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 80A D2PAK... |
SPB80N03S2L-06 G | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 80A D2PAK... |
SPB80N03S2L-06 | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 80A D2PAK... |
SPB80N06S2L-11 | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 80A D2PAK... |
SPB80N03S2L-05 G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 80A D2PAK... |
SPB80N06S2-H5 | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 80A D2PAK... |
SPB80N03S2-03 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 80A D2PAK... |
SPB80N06S2-09 | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 80A D2PAK... |
SPB80N06S2L-H5 | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 80A D2PAK... |
SPB80N06S2L-05 | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 80A D2PAK... |
SPB820P-BCQ1 | H&D Wire... | 32.05 $ | 40 | RF TXRX MOD WIFI CHIP + U... |
SPB80N03S2L-04 G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 80A D2PAK... |
SPB80N04S2-H4 | Infineon Tec... | -- | 1000 | MOSFET N-CH 40V 80A D2PAK... |
SPB80N03S203GATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 80A D2PAK... |
SPB80N03S2L-03 | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 80A D2PAK... |
SPB80N08S2-07 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 75V 80A D2PAK... |
SPB80P06P | Infineon Tec... | -- | 1000 | MOSFET P-CH 60V 80A D2PAK... |
SPB80N10L G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 80A TO-2... |
SPB80N04S2-04 | Infineon Tec... | -- | 1000 | MOSFET N-CH 40V 80A D2PAK... |
SPB80N06S2L-06 | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 80A D2PAK... |
SPB80N03S2L-05 | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 80A D2PAK... |
SPB80P06PGATMA1 | Infineon Tec... | -- | 1000 | MOSFET P-CH 60V 80A TO-26... |
SPB80N03S2L06T | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 80A D2PAK... |
SPB80N03S2L-03 G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 80A D2PAK... |
SPB800-BCP1 | H&D Wire... | 17.05 $ | 9 | RF TXRX MODULE WIFI CHIP ... |
SPB80N03S2L05T | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 80A D2PAK... |
SPB80N06S2-08 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 80A D2PAK... |
SPB80N03S2L-04 | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 80A D2PAK... |
SPB80N06S2-07 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 80A D2PAK... |
SPB80N06S2L-07 | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 80A D2PAK... |
SPB80N06S2L-09 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 80A D2PAK... |
SPB80N08S2L-07 | Infineon Tec... | -- | 1000 | MOSFET N-CH 75V 80A D2PAK... |
SPB80N10L | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 80A D2PA... |
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