SPB80N06S2L-09

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The SPB80N06S2L-09 is classified as a single Enhancement-Mode Power Field-Effect Transistor, often referred to as an eFET. It is a high-voltage power field-effect transistor (FET) that works as a voltage-controlled switch. It’s able to withstand a breakdown voltage of about 800V and a gate-source threshold voltage of 4V. The device follows a standard 3-pin lead configuration including gate, drain, and source.

The SPB80N06S2L-09 offers low on-resistance, high-current capability (as high as 80A) and relatively fast switching times. A wide variety of capacitive and EMC/EMI protection configurations can be integrated by using multiple devices.

The primary application of the SPB80N06S2L-09 is in automotive lighting and electronic control systems. It can be used in repetitive reverse load switching applications, load current protection circuits, over-current protection and in DC/DC converters. It can also be used in high-speed switching of audio signals, power supplies, and in the design of low-EMI circuits.

In terms of construction, the SPB80N06S2L-09 has a Metal Oxide Semiconductor FET (MOSFET) at its core, which is essentially a three-terminal voltage-controlled switch. The principle behind it is simple: when a voltage is applied to a gate terminal, an electric field emerges between the metal layer and the silicon substrate. This electric field is responsible for controlling the current flow between the source and the drain terminals. When a voltage is applied to the gate terminal, the electric field increases, which enhances the current flow from the source to the drain, turning the device “on”.

When the voltage at the gate is reduced, the electric field reduces, weakening the connection between the source and the drain and turning the device “off”. This is known as the device’s threshold voltage. The threshold voltage of the SPB80N06S2L-09 is 4V.

The SPB80N06S2L-09 is rated at 800V, which allows it to switch larger amounts of energy than conventional power components, such as diodes or rectifiers. The higher breakdown voltage also allows it to control large amounts of current with a low gate-source voltage.

In terms of speed, the SPB80N06S2L-09 has a relatively fast gate-drain capacitance and switching speed. The capacitance is determined by the gate-source voltage, but the switching speed is determined by the on-resistance of the device. The on-resistance is quite low, so the device is able to switch relatively quickly.

The device also has a wide range of temperature capabilities, which is particularly important for automotive applications. This device can operate over a wide -55˚C to 150˚C temperature range.

The SPB80N06S2L-09 is suitable for automotive, industrial and home applications. It is widely used in LED driver circuits and in appliance and telecom SMPS, as well as PFC circuits and motor control circuits. It can also be used as a switch for high-voltage AC relays and in high-voltage switching networks.

In summary, the SPB80N06S2L-09 is a high-voltage Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) that features a low on-resistance, high-current capability and a wide range of temperature capabilities. It is suitable for automotive, industrial and home applications, and can be used in a variety of applications, including DC/DC converters, over-current protection and high-voltage AC relays.

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