SPB80N10L

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An SPB80N10L is a logic level N-channel power MOSFET (metal-oxide-semiconductor field-effect transistor). These specialized transistors are used in power electronics and are characterized by some of the highest current and power ratings among MOSFETs. In this article, we discuss the SPB80N10L’s application field and working principle.

Preferences of SPB80N10L MOSFET

The SPB80N10L is a high-power device with a Drain-Source voltage (Vds) of 800 Volts and a Drain Current (Id) of 10 Amps. Due to its ultra-low on-resistance, this power MOSFET has one of the highest current ratings among all MOSFETs. Its low Gate-Source capacitance and reverse transfer capacitance make it ideal for high-speed switching operations, in addition to its high current handling capabilities. With its high thermal current rating, the SPB80N10L is able to handle large power levels without encountering thermal runaway situations. Furthermore, its resistance to electrostatic discharge (ESD) of up to 4KV are capable resilience to voltage spikes. Consequently, the SPB80N10L is best suited for high-power applications such as DC motor controls, solenoid control, high power switching, and any other high-power circuitry.

Working Principle of SPB80N10L MOSFET

The SPB80N10L is a logic level MOSFET, meaning it is designed to be operated at low gate-source voltages (Vgs). When a gate voltage is applied to the gate-source junction, holes within the insulating layer of the structure become positively charged, forming a conductive channel between the source and the drain. This channel enables electrons to migrate from the drain to the source under the influence of the applied gate-source voltage. The application of a gate-source voltage to the MOSFET results in a dramatic increase in the current flowing from drain to source. In other words, the current through the SPB80N10L can be controlled by the gate voltage applied to the gate-source junction.

Conclusion

The SPB80N10L is a logic level power MOSFET designed for high current and power operations. Due to its ultra-low on-resistance, this MOSFET is ideal for high-power applications such as DC motor controls, solenoid control, and high power switching. Additionally, its low gate-source capacitance and reverse transfer capacitance make it ideal for high-speed switching operations. The SPB80N10L is controlled by the application of a gate voltage to the gate-source junction, resulting in a dramatic increase in the current flowing from drain to source.

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