SPB80N03S2L-05 G

Vgs(th) (Max) @ Id:	2V @ 110µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	PG-TO263-3-2
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	167W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3320pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	89.7nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	4.9 mOhm @ 55A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction

SPB80N03S2L-05 G is a metal oxide semiconductor field-effect transistor (MOSFET) currently manufactured by NXP (formerly Philips), which is a world leading semiconductor supplier. It is a n-channel MOSFET switch with a channel length of 8 μm and a channel width of 80 μm. This MOSFET is used for a wide range of applications and has a variety of application fields such as power conversion, power supply, and amplifier circuits. This article provides an in-depth analysis of the characteristics and working principles of SPB80N03S2L-05 G and explains how the device is used in different application fields.

Characteristics of SPB80N03S2L-05 G

SPB80N03S2L-05 G has the highest power rating of 80 Watts and a drain source voltage (VDS) rating range of −20V to 80V. It is built with n-channel enhancement mode technology for use in high-performance applications. This device has a maximum drain current (ID) rating of 87.5A and can support an operating temperature range of -40°C to 85°C. Other technical parameters include gate threshold voltage (VGS) of -2V to 4V, RDS(on) of 0.026 Ohms, and gate charge (QG) of 11nC. In addition, SPB80N03S2L-05 G is RoHS compliant and the package dimensions are 10.8mm x 10.8mm.

Working Principle of SPB80N03S2L-05 G

SPB80N03S2L-05 G is a wide-bodied n-channel MOSFET with an integrated gate drive circuit. It is designed to deliver high power bandwidth and high-frequency performance. It is typically used in power supply and power conversion applications such as DC-DC converters and switching power supplies.In normal operation, the n-channel MOSFET acts as an accompanier. The source and drain pins are connected to the source and drain of the transistor, respectively. A voltage is applied to the gate and the source pin, which in turn causes the transistor to become charged. This charge is responsible for the current flow between the source and the drain. When the applied gate voltage is increased above the transistor\'s threshold voltage, it turns on and the resistance between the source and drain drops dramatically. This allows current to flow through the transistor and it starts to conduct.

Applications of SPB80N03S2L-05 G

SPB80N03S2L-05 G is used in a wide range of power conversion and switching power supply applications. Its high drain current, high voltage ratings, and low on-state resistance make it an ideal choice for use in high-power applications. It is especially suited for applications that require high voltage and rapid switching times, such as switch-mode power supplies and DC to DC converters. In addition, SPB80N03S2L-05 G can be used in high-frequency applications such as RF amplifiers, industrial applications including electric motors and welding machines, and LED lighting.

Conclusion

SPB80N03S2L-05 G is a widely used n-channel MOSFET switch with a wide range of application fields. Its characteristics and working principles have been discussed in this article and it has been shown that it is suitable for high-power applications and high-frequency switching. Furthermore, its RoHS compliance and convenient package size make it a popular choice for many applications.

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