SPB80N03S203GATMA1

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	PG-TO263-3-2
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	300W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	7020pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	150nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	3.1 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction

SPB80N03S203GATMA1 is an enhancement mode N-channel MOSFET made from silicon (Si) . It has both high speed switching characteristics and high-density surface mount packing. It is housed in a lead-free and RoHS-compliant TDFN-PowerPAD package. SPB80N03S203GATMA1 is not suitable for production with optical radiation harvesters. This component has been used in a variety of applications, such as power conversion, power management, and telecom infrastructure. In this article we will discuss the application field and working principle of this component.

Application fields

SPB80N03S203GATMA1 is used in several applications. It can be used in power conversion and power management. In power conversion, it helps to convert from one type of energy to another, such as converting from AC power to DC power. It is also used to optimize power delivery for communication systems, such as mobile communication networks, and for DC to DC conversion. In power management, it can be used for power conversion, power factor correction, and energy storage.

Working Principle

SPB80N03S203GATMA1 is a type of MOSFET (metal-oxide-semiconductor field-effect transistor) which uses various techniques to create a voltage-controlled current-conveying channel between its source and drain terminals. This device works using the principle of a junction between the semiconductor and a gate electrode, which controls the flow of current through the device in a controlled manner depending on the voltage applied to the gate. The channel width and channel length of the SPB80N03S203GATMA1 are defined in the product specification, which determines the maximum current that can flow through the device. This device is best suited to applications where fast switching times are preferred, as the switching times can be quite small in these devices. When the gate voltage is low, no current flows through the device as the source and drain terminals are out of conduction, meaning the device is "off". When the gate voltage is increased, the junction between the source and drain starts to conduct allowing current to flow through. The up-and-down nature of the gate voltage determines the amount of current flowing through the device. The dynamic on-resistance of SPB80N03S203GATMA1 is low and meets the standard requirements suitable for high frequency, low loss circuits. Since the device is in an N-channel configuration, the body diode is characterized to have acceptable conduction parameters for low losses and lower EMI.In conclusion, SPB80N03S203GATMA1 is an N-channel MOSFET which offers fast switching times and low dynamic on-resistance. This component can be used in power conversion, power management, and telecom infrastructure. Its working principle is based on creating a voltage-controlled current-conveying channel between its source and drain terminals. Its application field is broad and its performance has been proved to be reliable and satisfying. Understanding the characteristics of this product and its working principle will help engineers increase its efficiency and achieve maximum performance with the least amount of effort.

Conclusion

SPB80N03S203GATMA1 is a reliable and efficient component which has been widely used in power conversion, power management, and telecom infrastructure. It works by creating a voltage-controlled current-conveying channel between its source and drain terminals, and its dynamic on-resistance is low and meets the standard requirements. Understanding the application field and working principle of this component will enable engineers to use it effectively and achieve maximum performance.

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