SPB80N06S2L-06

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The SPB80N06S2L-06 is a N-Channel Enhancement Mode Field-effect Transistor (FET). It is a single power MOSFET transistor. Produced with STMicroelectronics\' advanced STripFET process, the transistor is also known as SuperMESH technology.

In terms of its technical features, the SPB80N06S2L-06 has a maximum drain current of 80A and a drain-source R DS (on) of 3.2mOhms. It has a low gate threshold voltage of 2.5V, a drain-source breakdown voltage of 100V and a maximum drain-source on-state resistance of 3.2mOhm. The peak drain-souce diode recovery time is also low at 140ns.

The transistor\'s gate threshold voltage of 2.5V allows for a low gate charge which helps keep power consumption to a minimum. It also has a low gate-source leakage current, which makes it suitable for battery-operated applications. Furthermore, the transistor has a very low on-state voltage drop which helps prevent power loss. This makes it an excellent choice for power management circuits.

The SPB80N06S2L-06 has a wide range of applications in which it can be used. Its low gate charge and low gate-source leakage make it well-suited for battery applications. The low on-state voltage drop makes it well-suited for power control in applications such as motor control and power supply circuits. It is also used in applications that require fast switching, such as resonant converters, digital signal processors and power amplifiers. Additionally, the SuperMESH technology helps ensure high reliability, making it suitable for applications that require long-term operation.

In terms of its working principle, the SPB80N06S2L-06 follows the same principle as a regular MOSFET transistor. It works by using an electric field to control the flow of electrons between the source and the drain terminals. When the gate voltage is applied, an electric field is generated between the source and drain terminals. This electric field causes the movement of electrons, allowing the current to flow between the drain and source terminals.

The SPB80N06S2L-06 has several advantages over other types of transistors, such as its low gate charge, low on-state voltage drop, and its SuperMESH technology. This makes it an excellent choice for a variety of applications, including battery-operated applications, power control applications, resonant converters, and motor control circuits. Its supermesh technology also helps ensure high reliability and long-term operation, making it a great choice for applications that require long-term operation.

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