SPB80N06S2-07 Allicdata Electronics
Allicdata Part #:

SPB80N06S2-07-ND

Manufacturer Part#:

SPB80N06S2-07

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 80A D2PAK
More Detail: N-Channel 55V 80A (Tc) 250W (Tc) Surface Mount PG-...
DataSheet: SPB80N06S2-07 datasheetSPB80N06S2-07 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 180µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 250W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4540pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 68A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SPB80N06S2-07 is a N-channel, logic level, and 60-V (max) rated MOSFET (metal-oxide semiconductor field-effect transistor). This type of device is typically used as a switch to control motors and other types of electrical equipment, as well as a voltage regulator in power management circuits. In this article, we will discuss the application field and working principle of the SPB80N06S2-07.

Application Field: The SPB80N06S2-07 is well suited for motor control, telecommunications equipment, consumer products, computer peripherals, and lighting applications. One of its main characteristics is that it can provide extremely low ON resistance and very low gate threshold voltage. This makes it an ideal choice for power switching applications and other low-side applications.

The SPB80N06S2-07 is particularly well suited for applications involving DC/DC conversion and other power management applications due to its low gate threshold voltage, low on-resistance, and small package size. Moreover, its small package size makes it an ideal choice for applications involving space constraints. Aside from the above mentioned applications, the SPB80N06S2-07 can also be used for other low-side and high-side applications that require a MOSFET with a low-voltage tolerance.

Working Principle: The SPB80N06S2-07 is a N-channel MOSFET since it has a number of N-doped regions in its structure. The N-channel MOSFET works by controlling the flow of current between the source and the drain terminals of the transistor. The gate of the SPB80N06S2-07 is connected to a positive voltage source, and when the voltage increases beyond a threshold voltage, the transistor will become conductive, thus allowing current to flow from the source to the drain. If the voltage drops below the threshold voltage, then the transistor will become non-conductive, thus stopping the current flow.

In order to control the ON/OFF state of the SPB80N06S2-07, a signal applied to its gate acts as a switch, thus allowing current to flow or not flow from the source to the drain of the transistor. By varying the signal applied to its gate, the voltage at the gate will change, which in turn controls the current flow from the source to the drain. This is why the SPB80N06S2-07 is well suited for applications involving power control and regulation.

The SPB80N06S2-07 is ideal for applications involving low-side and high-side applications because it can provide a low-voltage tolerance and a low on-resistance. It can be used in both power switching and voltage regulating applications, and due to its small package size, it is particularly well suited for applications involving space constraints.

The specific data is subject to PDF, and the above content is for reference

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