SPB80N03S2L-03 G

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The SPB80N03S2L-03G is an N-channel enhancement-mode Field Effect Transistor (FET) from STmicroelectronics, a global semiconductor leader. This industry-leading transistor provides superior performance both in terms of power handling capabilities and high-frequency operation. The SPB80N03S2L-03G is manufactured using STmicroelectronics’ advanced silicon-gate CMOS (Complementary Metal-Oxide Semiconductor) process and features a number of characteristics that make it well-suited for a wide range of applications.

When paired with an appropriate gate driver, the SPB80N03S2L-03G is capable of switching nearly zero gate-source voltage, which allows it to be used in applications where low conduction losses and low switching noise are essential. In addition, the transistor features an adjustable maximum operating current, allowing it to be used in applications with varying currents. This makes the SPB80N03S2L-03G a versatile and reliable choice for a variety of applications.

The SPB80N03S2L-03G has a wide operational range, which includes the voltage range of 4 V to 8 V. This makes it suitable for use in automotive applications, which often require higher voltage tolerances than other types of applications. In addition, the SPB80N03S2L-03G also offers excellent power handling and low gate-source capacitance, making it ideal for high frequency switching applications.

In terms of application field, the SPB80N03S2L-03G is particularly suited for use in automotive and industrial applications, where it can be employed as a switch or amplifier element. It is also well suited for use in home appliances and consumer electronics, where its low input capacitance allows it to be employed in audio amplifiers and high-speed signal processors. Additionally, the transistor’s low gate-source capacitance allows it to be used in high-frequency switching applications, such as computer power supplies and automotive electronics.

In terms of working principle, the SPB80N03S2L-03G operates by allowing electrons to flow between its gate and source terminals when sufficient voltage is applied to the gate. When a voltage is applied to the gate, the electric field created attracts electrons from the source, creating an inversion layer at the gate-source interface. Electrons from the source can then flow through the transistor, controlling the current between the drain and source terminals. This makes the SPB80N03S2L-03G an ideal choice for controlling currents in a variety of applications.

The SPB80N03S2L-03G is a powerful and reliable transistor from STmicroelectronics that provides excellent performance in a range of applications. Its wide operational range, low gate-source capacitance, and adjustable maximum operating current make it well-suited for automotive and industrial applications, as well as home appliances and consumer electronics. In addition to its versatility, the SPB80N03S2L-03G is also easy to use, making it a popular choice for a variety of applications.

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