SPB80N06S2L-H5 Allicdata Electronics
Allicdata Part #:

SPB80N06S2L-H5-ND

Manufacturer Part#:

SPB80N06S2L-H5

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 80A D2PAK
More Detail: N-Channel 55V 80A (Tc) 300W (Tc) Surface Mount PG-...
DataSheet: SPB80N06S2L-H5 datasheetSPB80N06S2L-H5 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 230µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6640pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 5 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SPB80N06S2L-H5 is a bi-directional N-Channel Field-Effect Transistor (FET) designed for high current switching applications. The SPB80N06S2L-H5 features a low on-resistance of only 7 milliOhms (mΩ) at a drain-source current of 20Adc, proven to provide high efficiency and reliable operation. This device also features a low threshold voltage of 4V, allowing it to be efficiently used in applications as low as 3.3V.

The SPB80N06S2L-H5 is an excellent choice for applications requiring fast switching, high current, and high efficiency. It is ideally used for multiple purposes in the consumer, automotive, industrial and consumer electronics industry such as motor drivers, power line controllers, DC/DC converters, and general purpose linear applications. It is also commonly used in a variety of powerful switching applications such as HVAC controllers, power supplies, DC motors, and many more.

The working principle of the SPB80N06S2L-H5 is fairly simple and straightforward. This device operates as an active current switch where the gate voltage is used to control the drain-source current. When the gate is forward biased, the FET is able to conduct current from the drain to the source, as shown in the circuit diagram below. As the gate voltage increases, the conductance of the FET increases and its on-resistance decreases.

SPB80N06S2L-H5 Diagram

The advantages of using the SPB80N06S2L-H5 compared to other active switches are numerous, starting with its low on-resistance and voltage drop. With its ultra-low on-resistance, energy wastage is minimized, thus increasing efficiency significantly due to reduced power losses. It also features a high current handling capability, with its drain-source current of 20Adc maximum, making it suitable for applications that require high current switching and control. In terms of dimensions, the SPB80N06S2L-H5 only requires a total board space of 10x10mm, making it compact and easy to implement.

Overall, the SPB80N06S2L-H5 offers superior performance, efficiency, and reliability compared to other types of FETs, making it the ideal choice for high current switching applications. Due to its low on-resistance, wide operating range, and small miniaturized package, this FET provides accurate switching with minimal power losses, making it a top choice for any application that requires high current control and switching. Whether it is used for linear or switching applications, the SPB80N06S2L-H5 is a great option for any engineer looking to optimize power consumption, efficiency, and reliability.

The specific data is subject to PDF, and the above content is for reference

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