Allicdata Part #: | SPP15P10PIN-ND |
Manufacturer Part#: |
SPP15P10P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 100V 15A TO-220AB |
More Detail: | P-Channel 100V 15A (Tc) 128W (Tc) Through Hole PG-... |
DataSheet: | SPP15P10P Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.1V @ 1.54mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 128W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1180pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 240 mOhm @ 10.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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Single junction field effect transistors (spp15p10p) are silicon controlled rectifier transistors that use the electric field effect to control the conductivity of an insulator. This type of transistor is created by sandwiching an insulating layer between two layers of silicon. By controlling the electric field, the transistor can be used to switch currents on and off or amplify weak signals.
The spp15p10p application field includes a wide variety of portable electronics and other products that require reliable semiconductors with a fairly low power consumption. This type of transistor finds applications in LED light drivers, solar panel control circuits, automotive electronics such as vehicle ECUs, and communication systems.
The working principle behind the spp15p10p transistor is based on the fact that the conductivity of an insulator can be modulated by an electric field, which is referred to as the field effect. By sandwiching a silicon n-type layer between two gate electrodes, an electric field can be generated between the two gate electrodes. This electric field is then used to control the conductivity of the n-type layer.
The gate electrode is connected to a voltage source and is responsible for generating the electric field. When a voltage is applied to the gate, a positive electric field is created which attracts electrons in the n-type layer and gives a continuous current flow. However, when the gate voltage is removed, the electric field disappears and the current flow stops.
The spp15p10p transistor is capable of achieving very high current and voltage gains, with low power consumption. It can also operate at very high frequencies, making it well-suited for applications such as audio amplifiers and radio receivers.
The device consists of an n-type layer sandwiched between two gate electrodes. The gate electrodes are insulated from the n-type layer, allowing control of the electric field produced. The pins of the spp15p10p transistor are typically labeled as source, drain and gate, with the source being the negative terminal and the drain being the positive terminal.
spp15p10p also feature an internal diode between the source and drain, which can be used to help limit the current flow. Additionally, the device also contains a JFET (junction field effect transistor) for increased input protection.
The spp15p10p is a reliable device that is well-suited for applications requiring efficient current and voltage control. Its low power consumption enables it to be used in a variety of settings, from consumer electronics to automotive and industrial applications. Its high-frequency response, high gain, and internal diode and JFET protection makes it a popular choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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