SPP11N60C3XKSA1 Allicdata Electronics
Allicdata Part #:

SPP11N60C3XKSA1-ND

Manufacturer Part#:

SPP11N60C3XKSA1

Price: $ 2.41
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 650V 11A TO-220AB
More Detail: N-Channel 650V 11A (Tc) 125W (Tc) Through Hole PG-...
DataSheet: SPP11N60C3XKSA1 datasheetSPP11N60C3XKSA1 Datasheet/PDF
Quantity: 1000
1 +: $ 2.18610
10 +: $ 1.94922
100 +: $ 1.59856
500 +: $ 1.29443
1000 +: $ 1.09169
Stock 1000Can Ship Immediately
$ 2.41
Specifications
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3-1
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tube 
Description

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SPP11N60C3XKSA1.html

SPP11N60C3XKSA1 application field and working principle

Transistors - FETs, MOSFETs - Single

The SPP11N60C3XKSA1 is a high speed, low gate charge MOSFET from NXP Semiconductors. It comes with a 600V drain-source voltage, a drain current of 11A, and can provide a low on-resistance and a low gate charge. The unit is designed for use in SMPS, motor control and other switching applications, as well as in fuses, rectifiers, phase control, and DC-DC converters. This unit has a breakdown voltage of 600V, and can be used as a switching device in both ac and dc circuits.

The SPP11N60C3XKSA1 can be configured as either a P-channel or N-channel MOSFET and is specified with a maximum Rds(on) of 3.65 ohms. It also has a high input-power-off threshold voltage, allowing it to remain in the off state, even when the gate voltage is close to the drain-source voltage.

The SPP11N60C3XKSA1 is designed to use an electrostatic discharge (ESD) protection diode to protect the device from electrostatic discharge events. This feature allows the device to survive exposure to up to 8 kV of electrostatic energy. It also has an integrated thermal-shutdown circuit with a low-level reset, which helps prevent thermal runaway.

The SPP11N60C3XKSA1 has a separate drain source connection, allowing it to be used in circuits up to 600V. It also has an undervoltage lockout that prevents the MOSFET from turning on while the input voltage is below a certain threshold. In addition, the device features anti-parallel Low Qrr (diode) to reduce reverse recovery time and thereby minimize the overshoot voltage and circulating current.

The SPP11N60C3XKSA1 also has a snubber diode and an integrated EMI filter. The snubber diode helps to reduce the electrical noise generated when the MOSFET is switched off. The integrated EMI filter helps reduce electromagnetic interference in the system. The device also has a built-in surge current protection feature, which helps protect the MOSFET from any high spike current events.

The SPP11N60C3XKSA1 is designed to provide a cost-effective solution for motor control, power management, and power conversion applications. It is highly efficient, reliable, and robust, and is capable of switching currents at high frequency. It is designed to withstand high temperatures, making it ideal for use in high power applications, such as solar systems and electric vehicles. The device also has a low gate charge, which helps reduce system power losses.

The specific data is subject to PDF, and the above content is for reference

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