Allicdata Part #: | SSM3K7002BSULFTR-ND |
Manufacturer Part#: |
SSM3K7002BSU,LF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 60V .2A USM |
More Detail: | N-Channel 60V 200mA (Ta) 150mW (Ta) Surface Mount ... |
DataSheet: | SSM3K7002BSU,LF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 200mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 2.1 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 3.1V @ 250µA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 17pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 150mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | USM |
Package / Case: | SC-70, SOT-323 |
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SSM3K7002BSU,LF transistors are field-effect transistors (FETs) that use a thin layer of metal oxide (MOS) to act as an insulator between two regions along an active region of the device. The gate of the FET acts as the control element, where application of the input signal causes a conductive area along the channel region which is then used to transfer current. SSM3K7002BSU,LF transistors are single-mode FETs and can be compared to a small switch. When the gate voltage becomes equal to the drain voltage, the channel width is maximized and allows current to flow through the channel region.
The main purpose of a transistors, FETs, MOSFETs, single is to act as a switching element in a circuit. They are capable of switching signals in one direction from gate to drain or from source to drain, due to their electric field characteristics. In a simplified manner, using an appropriate gate voltage, the current is allowed to flow from the source to the drain or the source to the gate, depending on the design. In addition, the control of the drain-source current can be achieved by controlling the gate voltage, allowing active components in a circuit to be turned on and off.
One of the most common application fields of the SSM3K7002BSU,LF transistors is digital logic. For example, it can be used to construct logic gates such as OR, AND, NAND and NOR. These devices can also be used in many other applications such as signal processing, signal amplification and signal switching.
Another popular application of these transistors is power management. They can be leveraged for controlling the power flow between two different circuits. This can be used to regulate an electric signal or it can be used to protect against power overloads. For example, in a home, the SSM3K7002B,LF can be used as a power switch to control the on and off status of a lightbulb.
Although the technology used in single-mode FETs has changed over the years, the basic working principle of the SSM3K7002BSU,LF remains the same. The current flow in the FET is dependent upon the electrostatic field created by an electric signal applied to the gate of the transistor. The electric field serves to first set up a conducting channel between source and drain, and then to control the current flow. The width of the conducting channel is determined by the electric field across the gate-channel junction.
In summary, the SSM3K7002BSU,LF transistors are single-mode field-effect transistors (FETs) that are used in many applications such as digital logic, power management and signal processing. They are capable of switch signals from gate to drain or from source to drain, due to their electric field characteristics. Their operating principle is based on the effect of an electric field on the gate-channel junction, where the width of the conducting channel is determined by the electric field across the junction.
The specific data is subject to PDF, and the above content is for reference
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