Allicdata Part #: | SSM3J36MFVL3FCT-ND |
Manufacturer Part#: |
SSM3J36MFV,L3F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET P-CH 20V 0.33A VESM |
More Detail: | P-Channel 20V 330mA (Ta) 150mW (Ta) Surface Mount ... |
DataSheet: | SSM3J36MFV,L3F Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | U-MOSIII |
Packaging: | Cut Tape (CT) |
Part Status: | Discontinued at Digi-Key |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 330mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 1.31 Ohm @ 100mA, 4.5V |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 1.2nC @ 4V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 43pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 150mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | VESM |
Package / Case: | SOT-723 |
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SSM3J36MFV,L3F is a single MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) device. A MOSFET is a type of field-effect transistor, which means it uses voltage as a controlling factor. Unlike other types of field-effect transistors, the MOSFET works with an insulation layer between the main channel and the gate, which allows the charge carrying electrons to flow through the main channel only when voltage is applied to the gate. The insulation layer which isolates the gate from the source, drain and bulk terminals makes the MOSFET an ideal device for both linear and switching applications.
Applications
The SSM3J36MFV,L3F is widely used in many types of applications including power electronics, audio systems, automotive systems, computer systems, telecommunication systems, digital logic circuits, and more. The device can be used for switchmode power electronic controllers and converters, audio power amplifiers, audio preamplifiers, linear regulator controllers, switched-mode power supplies, and many other applications.
Working Principle
The working principle of the SSM3J36MFV,L3F is based on the P-N junction which is formed between the source and the drain. When an external voltage is applied to the gate terminal, an inverted P-N junction is formed in the drain region which attracts the electrons from the source terminal. As the voltage across the gate increases, the electric field continues to increase, resulting in increased current flow. The electric field also affects the potential barrier height which determines the resistance of the device.
The maximum drain-source voltage (Vds) of the SSM3J36MFV,L3F is 36V and the drain current (Id) is rated at 3A. The maximum power rating of the device is 39W, with a maximum junction temperature of 175℃. The power efficiency of the device is 90%. The device also features a standby current of 0.1mA and an ESD protection rating of C8.
The SSM3J36MFV,L3F is a very versatile device which can be used in a wide range of analog and digital applications. Its features make it very suitable for use in switching, linear and other types of applications. Its applications range from basic switching applications to more complex power electronics, audio and digital circuits.
The specific data is subject to PDF, and the above content is for reference
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