SSM3K361TU,LF Discrete Semiconductor Products |
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Allicdata Part #: | SSM3K361TULFTR-ND |
Manufacturer Part#: |
SSM3K361TU,LF |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 100V 3.5A UFM |
More Detail: | N-Channel 100V 3.5A (Ta) 1.8W (Ta) Surface Mount U... |
DataSheet: | SSM3K361TU,LF Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.11342 |
Vgs(th) (Max) @ Id: | 2.5V @ 100µA |
Package / Case: | 3-SMD, Flat Leads |
Supplier Device Package: | UFM |
Mounting Type: | Surface Mount |
Operating Temperature: | 175°C |
Power Dissipation (Max): | 1.8W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 430pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 3.2nC @ 4.5V |
Series: | U-MOSVIII-H |
Rds On (Max) @ Id, Vgs: | 69 mOhm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SSM3K361TU,LF is a single-stage enhancement-mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). It is designed to be used in applications that require low-voltage and low-power switching in both small and large current ranges. This MOSFET is ideal for power supply circuits, and for driving motors, relays, and small-signal switching circuits.The operation of a MOSFET is based on a voltage-controlled arrangement of three electrodes, or terminals: the source, the gate, and the drain. A conducting channel is created between the drain and the source when a voltage is applied to the gate terminal. When the voltage applied to the gate terminal is increased, the conductivity of the channel increases, thereby allowing current to flow between the drain and the source.The SSM3K361TU,LF has a maximum drain current of 500 mA and an operating voltage of +50V. It has a low on-resistance and gate charge, and offers fast, low-noise switching performance. It is also designed to be used in high-temperature applications, with a maximum junction temperature of +175°C.This MOSFET is designed with a low-power, compact package, making it ideal for use in space-constrained applications. It can be used in multiple configurations, including source and gate configuration, as well as floating gate configuration. It is also designed with an exposed pad, which makes it easier to solder, allowing for easier and more reliable connections.The SSM3K361TU,Lf is typically used in power supply circuits, motor and relay drivers, and small-signal switching circuits. It can be used in high-temperature applications, and is perfect for automotive, communications, industrial, and computer applications.The SSM3K361TU,LF is a reliable and efficient MOSFET that is designed to provide superior performance in a wide range of applications. Its low on-resistance and gate charge, fast switching performance, and low-power, compact package make it perfect for use in high-temperature and space-constrained applications. It is ideal for powering circuits, motors, relays, and small-signal switching circuits, and can be used in a variety of configurations, making it perfect for use in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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