
Allicdata Part #: | STB12100TRSMC-ND |
Manufacturer Part#: |
STB12100TR |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | SMC Diode Solutions |
Short Description: | DIODE SCHOTTKY 100V 12A D2PAK |
More Detail: | Diode Schottky 100V 12A Surface Mount D2PAK |
DataSheet: | ![]() |
Quantity: | 1000 |
8000 +: | $ 0.17901 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 12A |
Voltage - Forward (Vf) (Max) @ If: | 750mV @ 12A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 300µA @ 100V |
Capacitance @ Vr, F: | 660pF @ 5V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Operating Temperature - Junction: | -55°C ~ 150°C |
Description
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Diodes - Rectifiers - SingleThe STB12100TR is an advanced rectifier diode, typically reported as the ‘Schottky’ diode. It is capable of delivering up to 2A of forward current with low reverse leakage. This type of diode is particularly useful in a variety of applications including power supplies, telecommunication and automotive applications.The STB12100TR is a single, uni-directional diode. It features a maximum reverse voltage of 100V and a maximum forward voltage drop of 0.25V @ 2A. In terms of physical characteristics, the package size of the STB12100TR is only 1.2mm x 1.2mm and it has a junction temperature of -55 °C to +150 °C.The working principle of the STB12100TR is based on how a semiconductor junction works, formed between two different types of materials. One material is typically a doped intrinsic type known as a N-type and the other material is doped and called a P-type material. Semiconductor junctions form potential barriers to current flow, the magnitude of which depends on the precursor doping concentrations.Semiconductor junctions form potential barriers to current flow and this is known as ‘the rectifying effect’ of a diode. This is typically because of the presence of excess carriers (similarly charged particles) and minority carriers at the junction. If a current is provided from an external power source such as a battery, excess carriers cross the junction in a unidirectional manner to create an internal electric field. This increases the amount of current flowing through the junction and this is known as the ‘forward current’. In the case of the STB12100TR diode, the forward current ranges from 0A to 2A while the forward voltage drop ranges from 0.25V @ 2A. If a reverse voltage higher than then maximum reverse voltage of the diode is applied, the flows in the reverse direction and is known as ‘reverse leakage current’. In the case of the STB12100TR, the maximum reverse current is typically 0.2uA @ 25°C and 100V.The applicability of the STB12100TR is vast and ranges from small signal detection to high power Pulse Width Modulation (PWM) controlling, from high power switching to electrolytic capacitor cooling. The STB12100TR also finds application in automotive systems such as spark plugs, as well as in telecommunication equipment and power converters. Its small size also makes it ideal for small space systems such as mobile telephones and laptop computers.In conclusion, the STB12100TR is a highly versatile and reliable diode which is suitable for both high and low power applications. It has a maximum reverse voltage of 100V, a maximum forward current of 2A and a forward voltage drop of 0.25V @ 2A. It also has a junction temperature between -55 °C to +150 °C. This makes it suitable for a variety of applications ranging from automotive to telecommunication and power supplies.The specific data is subject to PDF, and the above content is for reference
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