STB100NF03L-03T4

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The STB100NF03L-03T4 is a N-Channel Power MOSFET based Transistor that belongs to the STB series offered by STMicroelectronics. This MOSFET has been specifically designed to switch Low Voltage and High Current applications in Low Frequency, High Voltage environments with Low Output Capacitance.

The STB100NF03L-03T4 has a breakdown voltage of 100V and a nominal drain current of 25A. It is available in the TO-220AB package, which is a 3-Pin Through Hole Package. This package provides superior thermal management as well as high reliability due to the robust construction and internal stress relief.

The STB100NF03L-03T4 has an absolute maximum drain to source voltage of 100V (VDS), an absolute gate source voltage of 20V (VGS), a source gate voltage of 200V (VGSS), and a threshold voltage of 2.0V (VGS(th)). The primary application field of this MOSFET is for high current switching in low voltage environments. The MOSFET can be used for switching low voltage, high current circuits with low output capacitance.

The working principle of the STB100NF03L-03T4 can be summarized as follows. When the gate voltage is above the threshold voltage (which is 2V), the transistor will be in its ON state. This means that current will flow freely from the source to the drain and the drain-to-source voltage will be limited to the threshold voltage. When the gate voltage is below or equal to the threshold voltage, the MOSFET will be in its OFF state and the drain-to-source voltage will be infinite. In this state, no current will flow between the source and drain.

The STB100NF03L-03T4 provides several benefits for its users. Its low output capacitance allows for a faster switching speed and improved system performance. Its robust TO-220AB package increases reliability in high temperature environments. And its low total gate charge improves stability, allowing for superior overall performance.

In conclusion, the STB100NF03L-03T4 is an excellent transistor for high current switching applications in low voltage environments. Its robust construction, low output capacitance, and low total gate charge make it well suited for situations where reliability and performance are a priority.

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