Allicdata Part #: | STB14N80K5-ND |
Manufacturer Part#: |
STB14N80K5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 800V 12A D2PAK |
More Detail: | N-Channel 800V 12A (Tc) 130W (Tc) Surface Mount D2... |
DataSheet: | STB14N80K5 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 130W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 620pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Series: | MDmesh™ K5 |
Rds On (Max) @ Id, Vgs: | 445 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The STB14N80K5 is a vertical power field-effect transistor (FET) designed for high voltage applications in various equipment, including power supplies, motor drives and industrial systems. It is a reliable and cost effective device designed to meet a wide range of power requirements.
The STB14N80K5 is a vertical N-channel MOSFET, which is a single-polarity, high-voltage device. It has a maximum drain-to-source voltage rating of 800V and a maximum drain current of 14A. The STB14N80K5 is capable of operating at high frequencies of up to 450kHz with low on-state resistance. The device is also optimized for an extremely low turn-on voltage, allowing it to switch quickly and efficiently.
The STB14N80K5 offers superior performance in a variety of power applications. It is well-suited for applications that require high voltage and high current, such as solar-panel inverters, motor drives, and power supplies. The device also has an effective thermal design, which allows it to withstand high temperatures. This makes it ideal for applications that require continuous operation in high-temperature environments, such as power converters and motor drives.
The STB14N80K5 features a variety of features that make it an attractive device for a wide range of applications. It is extremely reliable and has a long lifetime, meaning it can be used in applications that require consistent performance over long periods of time. It also has a low on-state resistance and can operate at high frequencies, meaning it can switch quickly and efficiently. The device is also optimized for low turn-on voltage, allowing it to switch quickly and with minimal power consumption.
The STB14N80K5 is based on the principle of a field-effect transistor, or FET. It consists of a metal-oxide semiconductor (MOS) gate structure and two source/drain regions. The device has two basic modes of operation: the “enhancement” mode and the “depletion” mode. In enhancement mode, a positive voltage is applied to the gate, increasing the conductivity between the source and drain. In depletion mode, a negative voltage is applied to the gate, decreasing the conductivity between the source and drain.
The STB14N80K5 is an effective device for high voltage applications, offering superior performance and reliability in a variety of power applications. Its reliable design and low on-state resistance make it well suited for applications in power supplies, motor drives, and industrial systems. It is also optimized for low turn-on voltage and can switch quickly and efficiently. The device is also capable of operating at high frequencies, making it ideal for applications that require fast switching and minimal power consumption.
The specific data is subject to PDF, and the above content is for reference
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