Allicdata Part #: | STB14NK50Z-1-ND |
Manufacturer Part#: |
STB14NK50Z-1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 500V 14A I2PAK |
More Detail: | N-Channel 500V 14A (Tc) 150W (Tc) Through Hole I2P... |
DataSheet: | STB14NK50Z-1 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 100µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2000pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 92nC @ 10V |
Series: | SuperMESH™ |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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.STB14NK50Z-1 Application Field and Working Principle
The STB14NK50Z-1 is a single N-Channel MOSFET that belongs to the STripFET series. It is manufactured by STMicroelectronics and its drain current is rated up to 14A at 25°C with a single pulse. The STB14NK50Z-1 offers a low on-state resistance, which makes it very attractive for designers interested in efficiency improvements. The device has a typical gate-source avalanche energy rating of almost 4mJ, a process featuring high temperature soldering of 260°C, and an absolute maximum junction temperature of 175°C.
The STB14NK50Z-1 belongs to a family of MOSFETs that uses a new low-voltage, low-resistance process technology. The device operates from a Vgs (gate to source voltage) of 4.5 to -20 volts. This makes it highly suitable for applications such as battery-powered equipment and audio, video, and multimedia applications that require low voltage operation.
The STB14NK50Z-1 MOSFET has an application field that is wide and versatile. It is used in areas such as the linear, switching, and high-frequency circuits of telecom and automotive systems, computational and consumer electronics. It is an ideal choice for high-efficiency power conversion, DC-DC converters, GSM and other RF applications and mobile phone power management, where low on-state resistance, fast switching times, and low thermal stability are important.
Working Principle
MOSFETs, including the STB14NK50Z-1, operate on the principle of majority carriers. Each MOSFET consists of three main parts; the gate, source and drain. The drain is the terminal to which the load is connected, the source is typically connected to the power supply, and the gate is the control element. The term “majority-carrier” implies that the flow of current from the source to the drain occurs primarily through electrons, not holes.
The MOSFET works as follows: A voltage applied between the gate and source terminals is used to produce an electric field across the underlying channel region. When a voltage is applied to the gate, the electric field modifies the underlying channel region, reducing the resistance and allowing current to flow from the source to the drain. This is why the MOSFET is called a voltage-controlled device.
The STB14NK50Z-1 MOSFET also has an internal body diode between the source and drain that allows current to flow in the reverse direction. This diode also helps to protect the MOSFET from overcurrent conditions.
Finally, the STB14NK50Z-1 features a higher maximum channel temperature rating (175°C) compared to other MOSFETs, making it well-suited for operating in high-temperature environments.
Benefits
The STB14NK50Z-1 provides a range of benefits for designers. Its low on-state resistance makes it attractive for efficiency improvements, while its high temperature rating and fast switching times make it suitable for a variety of applications. In addition, the fact that the device operates from a low Vgs makes it ideal for low voltage applications.
The STB14NK50Z-1 is also a low cost solution for designers, as it is available in a wide range of packages and offers very good price-performance ratio. Furthermore, its low gate charge and low gate threshold voltage make it well suited for switching applications.
Conclusion
The STB14NK50Z-1 is a single N-Channel MOSFET that offers a low on-state resistance and fast switching speeds. It is suitable for a variety of applications, including battery-powered equipment, audio/video equipment, telecom and automotive systems, and DC-DC converters. It is characterized by its low Vgs operation, high temperature rating and fast switching times. The STB14NK50Z-1 is a low cost, highly efficient option for designers interested in high-performance solutions.
The specific data is subject to PDF, and the above content is for reference
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