STB18NM60N

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The STB18NM60N is a Silicon N-channel Power MOSFET that has been designed using STMicroelectronics\' advanced Trench MOS technology to achieve low on-state resistance and superior switching performance. It is a single component that offers different application fields and working principles.

Application Field

The STB18NM60N is an ideal choice for motor control and lighting applications including power supply, DC-DC converter, motor drive and lighting system. Its wide range of voltage, current, return current and mounting types make it suitable for a variety of applications.

For lighting applications, this device is capable of delivering high efficiency performance. The 8V rating mode helps reduce power dissipation and offers higher efficiency and high power factor. The built-in diode reduces the number of components that need to be added. In addition, its high voltage adjustable type allows the device to regulate the current passed through it, providing a continuous level of brightness.

The STB18NM60N can also be used in motor control applications where its low on-state resistance and superior switching characteristics make it a good option. It can handle medium to high peak currents and is ideal for both trapezoidal and sine wave commutation. Its high-speed switching capabilities make it ideal for brushless DC motor drives and high-influence switching applications.

Working Principle

The STB18NM60N is a MOSFET device that operates using the principle of voltage and current conduction. When a gate voltage is applied to the device, the electric field between the gate and the source forms a depletion region in the substrate below the gate and source known as the depletion layer. This layer acts as a gate for current conduction and the more gate voltage applied, the thicker the depletion layer, thus allowing greater current flow. This principle of current conduction is upheld by the device\'s high voltage capability and low on-state resistance.

The STB18NM60N is designed specifically to provide superior switching characteristics and low on-state resistance. Its trenchgate structure increases the number of transistors in the layer and thus reduces the resistance. The device also features a per-doped body contact region and an undoped body contact region, which helps reduce local potentials and increase uniformity across the device.

Finally, the device\'s superior switching characteristics are achieved by its optimized structure and low on-state resistance. The optimized structure allows for a faster and more efficient energy transfer between the gate and the source and thus reduces switching losses. The low on-state resistance also helps reduce power losses when the device is turned on.

Conclusion

The STB18NM60N is a MOSFET device designed with STMicroelectronics\' advanced trenching technology. It has found uses in a variety of applications and it is particularly suitable for lighting and motor control applications. Its low on-state resistance and superior switching capabilities make it an ideal choice for these applications. The device operates on the principle of voltage and current conduction and its optimized structure, tailored doping profile and low on-state resistance make it a highly efficient and reliable device.

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