STB14NM65N

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The STB14NM65N is a powerful device that has extensive applications in electronics and electrical engineering. First released by STMicroelectronics in 2020, this device is a single N-Channel MOSFET which has high-performance and low on-resistance characteristics. That is why this product is widely used in various applications such as processor cores, power converters, solar inverters and motor controllers.

The term MOSFET is an acronym for Metal–Oxide–Semiconductor Field-Effect Transistor and is a type of transistor that is commonly used in modern electronics applications. A MOSFET is a unipolar type of transistor, meaning it has three terminals: source, gate, and drain. The device operates as a current-controlled switch that is capable of acting as an amplifier or voltage-controlled switch.

The STB14NM65N is a N-channel MOSFET which means that the majority charge carriers in it are electrons and the channel is formed in the substrate between the Source and the Drain. This makes the device inherently a “Slow-on” MOSFET due to the presence of trapping and release mechanism in this device.

The main advantage of using a STB14NM65N is its low on-resistance characteristics and its ability to offer a high level of power conversion efficiency, low switching losses, and smooth operation. The device is also capable of supporting very high power levels. It can handle voltages of up to 650V, gate charge of 15nC, and drain-source on-resistance of 13mOhm while operating at a current of up to 11.7A.

The STB14NM65N can be utilized in various types of applications due to its unique characteristics. It is highly used in processor cores, where it can be used to regulate the voltage to the processor in order to reduce power consumption. The device is also used in power converters and inverters, where it helps to regulate the amount of current being supplied to the main circuit. It is also used in motor controllers where it is used to control the current being supplied to the motor and to regulate the torque and speed of the motor.

The working principle of the STB14NM65N is based on the voltage potential in the gate terminal. When a voltage is applied to the gate terminal, it creates a depletion region underneath the gate. This region forms a barrier between the source and the drain which creates an additional resistance in the channel. The amount of resistance will dictate the amount of current that can flow in the channel, and once enough current has flowed, the FET is considered to be “on”.

The depletion region can be changed in size by changing the voltage on the gate terminal. Therefore, the size of the channel can be changed depending upon the voltage applied to the gate terminal, and the resulting current that flows through the channel can be used to regulate the voltage and current to the source and drain.

In summary, the STB14NM65N is a powerful device that has extensive applications in electronics and electrical engineering. It is a single N-channel MOSFET which has high-performance and low on-resistance characteristics, making it suitable for applications such as processor cores, power converters, solar inverters and motor controllers. The PIN operates based on the voltage potential in the gate terminal, which changes the size of the depletion region in the substrate, allowing for current to flow in the channel and regulate the voltage and current to the source and drain.

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