
Allicdata Part #: | 497-7933-2-ND |
Manufacturer Part#: |
STB14NK60ZT4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 13.5A D2PAK |
More Detail: | N-Channel 600V 13.5A (Tc) 160W (Tc) Surface Mount ... |
DataSheet: | ![]() |
Quantity: | 1000 |
Specifications
Vgs(th) (Max) @ Id: | 4.5V @ 100µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 160W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2220pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 75nC @ 10V |
Series: | SuperMESH™ |
Rds On (Max) @ Id, Vgs: | 500 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 13.5A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Description
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Introduction to STB14NK60ZT4
The STB14NK60ZT4 Power MOSFET is an advanced member of STMicroelectronics’ STripFET™ family with very low gate charge, extremely fast switching and Avalanche ruggedness.It includes a high-voltage vertical power MOSFET and an integrated Schottky diode in a package made for low-voltage applications. STB14NK60ZT4 allows the highest power density in the industry, making it ideal for space-limited applications. The 14A continuous drain current and 60V drain-source voltage rating make it suitable for almost any power-delivery application.Application Field of STB14NK60ZT4
The STB14NK60ZT4 is designed for use in the secondary side of multiple-output power supplies such as those found in computers, telecom systems, and consumer electronics, as well as in dc-dc converters. In addition, it is also used to work as battery chargers, switchmode power supplies, LED drivers, and motor drives.Moreover, its high breakdown voltage, low threshold voltage, low on-resistance, and low capacitance make it ideal for use in static switching rather than dynamic switching applications.Working Principle of STB14NK60ZT4
At the heart of the STB14NK60ZT4 is a vertical power MOSFET, the STripFET™ power MOSFET technology. It features a planar triple-diffused vertical cell, which helps prevent electrostatic discharge (ESD) and improves switching speed, reducing power losses.The MOSFET works using the universal MOSFET mechanism. This involves minority carriers in the channel region, which are thermally generated from negative voltage applied to the gate. When a negative voltage is applied to the gate, the field created by this voltage forms an n-type region in the already existing p-type semiconductor material. This n-type region is known as the channel.Hence, a P-channel MOSFET has a p-type channel for electrons to flow, and an N-channel MOSFET has an n-type channel for holes to flow.The STB14NK60ZT4 is an N-channel MOSFET. When a negative voltage is applied to the gate, the channel forms and gates the majority carriers, holes, onto the drain, resulting in current flow. This is the basic operating principle of the STB14NK60ZT4.Advantages of STB14NK60ZT4
The STB14NK60ZT4 has multiple advantages over other similar applications:• Its integrated Schottky diode eliminates the need for an external diode in many applications, reducing the size and cost of the system.• Its very low gate charge and very fast switching allow for higher frequency operation, leading to lower losses and improved efficiency.• It has an extremely low drain-source on-resistance, giving it a high conduction power capability and excellent thermal performance.• Its Avalanche Ruggedness ensures it can withstand high voltage transients of up to 600V.Conclusion
The STB14NK60ZT4 is an advanced Power MOSFET from STMicroelectronics’ STripFET™ family with very low gate charge and extremely fast switching. It is ideal for high-power delivery applications such as power supplies, switchmode power supplies, LED drivers, motor drives and battery chargers, as well as static switching. It features an integrated Schottky diode, low drain-source on-resistance, and high Avalanche ruggedness, making it a reliable and cost-effective alternative to other similar applications.The specific data is subject to PDF, and the above content is for reference
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