STB100N10F7

Gate Charge (Qg) (Max) @ Vgs:	61nC @ 10V
Base Part Number:	STB100N10
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	150W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4369pF @ 50V
Vgs (Max):	±20V
Series:	DeepGATE™, STripFET™ VII
Vgs(th) (Max) @ Id:	4.5V @ 250µA
Rds On (Max) @ Id, Vgs:	8 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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STB100N10F7 is a type of N-channel MOSFET. It has a high drain-source breakdown voltage of 100V and a continuous drain current of 10A. It is a very versatile semiconductor device and is used in a wide range of applications and operating conditions.The MOSFET is a three-terminal semiconductor device that is available in two types: N-channel and P-channel. The N-channel MOSFET, like the STB100N10F7, has an arrow pointing from its drain to its source. This arrow indicates the "flow" of electrons. The P-channel MOSFET has an arrow pointing from its source to its drain, indicating the "flow" of holes.The STB100N10F7 is most commonly used for high-power switching applications, such as motor control, DC-DC converters and power supplies. It can also be used as an amplifier or a low-cost analog switch. The device is most commonly used in circuits having a voltage level higher than 15V.The STB100N10F7 works on the principle of the avalanche effect, wherein the avalanche breakdown voltage is greater than the breakdown voltage of the device. When the device is operating in its ON state, the avalanche effect causes electrons to flow from the drain to the source and generates a large amount of heat, which is why the device needs to be properly heat-sunk. As the current increases, the avalanche effect also creates a positive feedback, which amplifies the flow of current and increases the voltage drop across the device.The device has a high frequency response and can sustain high current levels without damaging its internal components. This makes it ideal for a number of applications, including motor control, switch-mode power supplies and power converters.The STB100N10F7 is an economical, easy-to-use device that offers reliable performance and a wide variety of applications. It is available in a variety of packages, making it suitable for a wide range of applications. The device is able to operate in a wide temperature range, making it ideal for use in harsh environmental conditions. In short, the STB100N10F7 is a versatile and widely used MOSFET with a high drain-source breakdown voltage and a continuous drain current of 10A. It works on the principle of the avalanche effect and can sustain high currents. It is used in a variety of applications, including motor control, switch-mode power supplies and power converters. It is an easy-to-use, cost-efficient device that is available in a variety of packages and is suitable for a wide range of operating conditions.

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