| Allicdata Part #: | 497-5381-2-ND |
| Manufacturer Part#: |
STB12NM50T4 |
| Price: | $ 1.53 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 550V 12A D2PAK |
| More Detail: | N-Channel 550V 12A (Tc) 160W (Tc) Surface Mount D2... |
| DataSheet: | STB12NM50T4 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 1.53000 |
| 10 +: | $ 1.48410 |
| 100 +: | $ 1.45350 |
| 1000 +: | $ 1.42290 |
| 10000 +: | $ 1.37700 |
| Vgs(th) (Max) @ Id: | 5V @ 50µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 160W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1000pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
| Series: | MDmesh™ |
| Rds On (Max) @ Id, Vgs: | 350 mOhm @ 6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
| Drain to Source Voltage (Vdss): | 550V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The STB12NM50T4 is a N-channel MOSFET belonging to the class of metal-oxide-semiconductor field-effect transistors (MOSFETs). It has an extremely low on-resistance and operates in the single channel mode, meaning that the current flows through a single source-drain channel and is then switched off whenever needed. This MOSFET belongs to the STB series of N-channel MOSFETs, which are specially designed for low voltage applications.
The operating principle of the STB12NM50T4 is built upon the three terminal drain, source and gate structure. The internal construction of the device consists of several layers of metal gate-oxide-semiconductor material. To apply a voltage across the gate and the source of the MOSFET will create a channel for current to flow through. Depending on the voltage applied between the gate and the source this channel can be made wider or narrower, allowing for more or less current to flow. When the gate-source voltage is equal to the specified threshold voltage of the left lead, the MOSFET is considered to be in the “ON” state and electrons can flow through the source-drain channel.
The STB12NM50T4 has many applications in the field of electronic devices. It is an ideal component for low current circuits, as its very low resistance ensures that minimal power is lost during switching operations. It is frequently used in systems such as LCD monitors, digital circuits and audio systems, where electrical signals must be amplified up to a certain level. The STB12NM50T4 can also be used in power converters, inverters, motor drives and in power circuits like solar power systems.
The STB12NM50T4 is a very efficient MOSFET. It has a low on-resistance making it well-suited for low current applications and its single channel construction ensures that it is protected from short circuits, helping it to operate reliably in a variety of conditions. Furthermore its very small size makes it convenient to integrate into any circuit design. The device can be used to enhance the efficiency of a variety of applications while also providing a high level of reliability.
The specific data is subject to PDF, and the above content is for reference
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STB12NM50T4 Datasheet/PDF