STB18N55M5

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The STB18N55M5 is a high voltage, high power, normally-off, n-channel silicon carbide MOSFET (metal oxide semiconductor field-effect transistor) designed to replace IGBTs (Insulated Gate Bipolar Transistors) in a variety of applications. It has a low gate charge (< 5nC typical) for fast switching, and a low RDS(on) (< 18mΩ at 25A Vgs = 10V) for excellent thermal characteristics. The STB18N55M5 can provide up to 125A of continuous drain current and is rated for a Vds up to 600V. It has an advanced co-packing technology which allows it to deliver high-temperature performance, making it suitable for a number of high-power applications.

STB18N55M5 devices are used in a range of applications where high power and high-temperature performance are required, including motor drives, power supplies, converters, welding, and automotive applications. They are particularly suitable for high-current applications, such as in motor drives where IGBTs would normally fail due to high current levels.

The STB18N55M5 has a unique working principle. It is a field effect transistor (FET), which means that the current flow is controlled by the amount of gate voltage applied to the gate electrode. The gate electrode is insulated from the source and drain electrodes, allowing for very low gate capacitance and allowing for a much faster switching speed than other types of transistors. This is known as the normally-off operation of a FET, which means that it will be off when no gate voltage is applied. The low gate voltage threshold makes it well suited for high-current applications where a small amount of gate voltage is all that is needed to switch the transistor on.

The STB18N55M5 is able to provide exceptionally low on-state resistance while still providing a low gate charge. This means that it can operate at high power levels without wasting energy. The robust silicon carbide construction also means that the MOSFET is able to withstand high temperatures and will provide reliable performance for an extended period of time. The low on-resistance and low gate charge combined with the reliability of the silicon carbide make the STB18N55M5 an ideal choice for a variety of applications.

In summary, the STB18N55M5 is a high power, high voltage, normally-off MOSFET that offers excellent thermal performance and fast switching speeds. It is suitable for a wide range of applications where IGBTs are not suitable, due to its low gate charge, low on-resistance, and rugged silicon carbide construction. The advanced co-packing technology also allows it to provide reliable performance in high-temperature environments.

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