STF14NM50N

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A small-signal, N-channel MOSFET, the STF14NM50N is the power transistor for a variety of electronics applications. With a specifically engineered structure, the STF14NM50N offers low-noise, high linearity performance, even at high frequencies. It offers improvements over traditional MOSFETs in terms of switching speed, power dissipation, and power density.

The STF14NM50N is used in many applications, such as high-power amplifiers and switching circuits in electronics equipment, audio amplifier designs, power supplies, cellular base transceiver stations. It is also suitable for use as a pulsed amplifier, a diode bridge rectifier, as well as other pulse power applications. Due its enhanced features, the STF14NM50N provides high linearity, high power dissipation, low resistance and fast switching performance under various conditions.

When using the STF14NM50N, optimal performance is achieved with the use of a gate-source voltage between 2V and 8V. The gate-source resistance should typically be kept below maximum of 100kOhm. The STF14NM50N performance characteristics are optimized for use with an operating temperature range between -55 and +150degrees Celsius. It has an RDS On rating of 140mOhms and a maximum DC drain current rating of 14A. Typical gate charge of 40nC and drain-source capacitance of 265pF mean that this MOSFET can handle current fairly quickly and is suitable for use in high-speed amplifiers.

The STF14NM50N is a vertical solid-state power device, featuring an N-type and P-type silicon layer. The device has a source, drain and gate contact which connect to the source, drain and gate terminals respectively. The gate terminal is connected to a metal oxide gate which leads current to the device structure. The structure of this device is extremely critical for the performance of the MOSFET, and is carefully designed to provide a low-noise, high-linearity operation, and for a fast response time.

When a negative voltage is applied to the gate, an electric field is created which creates inversion channels between the source and the drain through the semiconductor material. These inversion channels, referred to as the channel region, allow electrons (or holes, in the case of P-channel MOSFETs) to flow between the terminals, thereby enabling current flow. The STF14NM50N is designed to reduce drain-source on-state resistance in order to minimize power loss in operation. This makes the device ideal for high-power electronic applications where efficient operation is paramount.

When the MOSFET is used as a switching device, current flow is enabled when a voltage is applied to the gate. The drain-source resistance (RDS(on)) is minimized to reduce power loss, while the low gate charge allows the device to switch at a faster rate. This makes the STF14NM50N ideal for switching power applications.

When used as an amplifier, the STF14NM50N\'s low-noise, high linearity performance allows for better signal integrity and wider bandwidths than traditional MOSFETs. The low gate charge of the device also enables faster switching, allowing higher performance with faster processing speeds. The STF14NM50N is suitable for use in audio amplification, power supplies, cellular base transceiver stations, diode bridge rectifier and other pulse power applications.

In summary, the STF14NM50N is an N-channel power MOSFET suitable for use in a variety of electronic applications such as amplifiers and switching circuits. It offers enhanced features such as low-noise, high linearity performance, reduced switching time and power dissipation. The device is designed to operate within a wide temperature range and is able to handle high levels of current. With optimized performance characteristics, the STF14NM50N is suitable for use as an amplifier, switching device, or for other pulse power applications.

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