Allicdata Part #: | 497-4804-5-ND |
Manufacturer Part#: |
STF12NM50N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 500V 11A TO220FP |
More Detail: | N-Channel 500V 11A (Tc) 25W (Tc) Through Hole TO-2... |
DataSheet: | STF12NM50N Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 940pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Series: | MDmesh™ II |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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?STF12NM50N Application Field and Working Principle
The STF12NM50N is a high-performance N-channel, field-effect transistor (FET) produced by STMicroelectronics. It is a type of power MOSFET, designed for applications that require high efficiency and performance. With its excellent thermal characteristics and low on-resistance, it is suitable for both industrial and consumer applications.
Applications of the STF12NM50N
The STF12NM50N is primarily used in high-frequency, high-efficiency switching applications. It is ideal for power management systems, motor control systems, and consumer devices such as smart phones, tablets, and personal computers. Its low on-resistance and high-current carrying capacity make it ideal for use in switching applications such as DC-DC converters, PFC converters, and lighting applications. Additionally, its low gate charge and low gate-source capacitance make it suitable for high-speed gate drives.
Working Principle of the STF12NM50N
The STF12NM50N is an N-channel MOSFET, which means that it is capable of carrying and controlling current in the channel when an input voltage is applied to the gate. The channel is formed by a semiconductor material with a high resistance, meaning that when the gate voltage is increased, the channel will be open, allowing a current to flow from the drain to the source. The drain and source are used to control and pass the current. The current is controlled by the gate voltage, which affects the resistance between the source and drain. The higher the gate voltage, the lower the resistance and vice versa.
Features of the STF12NM50N
The STF12NM50N is a highly efficient power MOSFET, which has a low on-resistance of 0.81Ω max. It also has an excellent thermal performance, with a thermal resistance of 2.2°C/W. In addition, it has an avalanche capability of even during high temperature applications, making it ideal for switching applications. It has a low gate charge of 8.7nC, which allows for high-speed switching. Finally, it has a low gate-source capacitance of 13nC, which reduces the power losses associated with switching.
Conclusion
The STF12NM50N is a high-performance N-channel field-effect transistor produced by STMicroelectronics. It is designed for applications that require high efficiency and performance, such as power management systems, motor control systems, and consumer devices. It has low on-resistance, excellent thermal characteristics, snow avalanche capability and a low gate charge, which makes it suitable for high-speed switching applications. Therefore, the STF12NM50N is an ideal power MOSFET for high efficiency and performance applications.
The specific data is subject to PDF, and the above content is for reference
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